On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt

Guan, Weihua; Liu, Ming; Long, Shibing; Liu, Qi; Wang, Wei

doi:10.1063/1.3039079

Cited by 197 publications

(132 citation statements)

References 16 publications

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“…28 Similar emf voltages and their impact on the device stability was also reported in other ECM based inorganic and polymer electrolytes. 10,12,28 It should be noted that the volatile TS behavior of our Ag/ZrO 2 /Pt device is remarkably distinct from the previously reported nonvolatile memory properties in Au/ZrO 2 /Ag, 29 Cu/ZrO 2 :Cu/Pt 30 structures. This discrepancy may be ascribed to the different film deposition approaches employed in the fabrication procedure.…”

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confidence: 78%

Bidirectional threshold switching characteristics in Ag/ZrO2/Pt electrochemical metallization cells

Wang

et al. 2016

AIP Advances

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A bidirectional threshold switching (TS) characteristic was demonstrated in Ag/ZrO2/Pt electrochemical metallization cells by using the electrochemical active Ag electrode and appropriate programming operation strategies The volatile TS was stable and reproducible and the rectify ratio could be tuned to ∼107 by engineering the compliance current. We infer that the volatile behavior is essentially due to the moisture absorption in the electron beam evaporated films, which remarkably improved the anodic oxidation as well as the migration of Ag+ ions. The resultant electromotive force would act as a driving force for the metal filaments dissolution, leading to the spontaneous volatile characteristics. Moreover, conductance quantization behaviors were also achieved owing to formation and annihilation of atomic scale metal filaments in the film matrix. Our results illustrate that the Ag/ZrO2/Pt device with superior TS performances is a promising candidate for selector applications in passive crossbar arrays.

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confidence: 78%

Bidirectional threshold switching characteristics in Ag/ZrO2/Pt electrochemical metallization cells

Wang

et al. 2016

AIP Advances

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“…2c reached B1 Â 10 5 A cm À 2 . This current density is large enough to induce a thermally assisted electromigration 30,31 of oxygen vacancies into the insulating tantalum oxide clusters caused by the accompanying Joule heating effect 32,33 at the Pt/SiO 2 interface. This result suggests the possibility that the filamentary channels consisting of the metastable phase TaO 1 À x (ref.…”

Section: Resultsmentioning

confidence: 99%

In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure

et al. 2013

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Electrically induced resistive switching in metal insulator-metal structures is a subject of increasing scientific interest because it is one of the alternatives that satisfies current requirements for universal non-volatile memories. However, the origin of the switching mechanism is still controversial. Here we report the fabrication of a resistive switching device inside a transmission electron microscope, made from a Pt/SiO 2 /a-Ta 2 O 5 À x /a-TaO 2 À x /Pt structure, which clearly shows reversible bipolar resistive switching behaviour. The currentvoltage measurements simultaneously confirm each of the resistance states (set, reset and breakdown). In situ scanning transmission electron microscope experiments verify, at the atomic scale, that the switching effects occur by the formation and annihilation of conducting channels between a top Pt electrode and a TaO 2 À x base layer, which consist of nanoscale TaO 1 À x filaments. Information on the structure and dimensions of conductive channels observed in situ offers great potential for designing resistive switching devices with the high endurance and large scalability.

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“…Since Joule heating plays an important role in the RESET, ECM cells can also be operated in the unipolar RS mode although the endurance is very poor. 46,47 Figure 3 shows the I-V characteristics of the unipolar RS and corresponding OFF state I-V asymmetry for both cells. The asymmetry is found to be similar to that in the bipolar RS mode.…”

Section: Resultsmentioning

confidence: 99%

Mechanism for resistive switching in chalcogenide-based electrochemical metallization memory cells

Zhuge

et al. 2015

AIP Advances

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It has been reported that in chalcogenide-based electrochemical metallization (ECM) memory cells (e.g., As2S3:Ag, GeS:Cu, and Ag2S), the metal filament grows from the cathode (e.g., Pt and W) towards the anode (e.g., Cu and Ag), whereas filament growth along the opposite direction has been observed in oxide-based ECM cells (e.g., ZnO, ZrO2, and SiO2). The growth direction difference has been ascribed to a high ion diffusion coefficient in chalcogenides in comparison with oxides. In this paper, upon analysis of OFF state I–V characteristics of ZnS-based ECM cells, we find that the metal filament grows from the anode towards the cathode and the filament rupture and rejuvenation occur at the cathodic interface, similar to the case of oxide-based ECM cells. It is inferred that in ECM cells based on the chalcogenides such as As2S3:Ag, GeS:Cu, and Ag2S, the filament growth from the cathode towards the anode is due to the existence of an abundance of ready-made mobile metal ions in the chalcogenides rather than to the high ion diffusion coefficient.

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On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt

Cited by 197 publications

References 16 publications

Bidirectional threshold switching characteristics in Ag/ZrO2/Pt electrochemical metallization cells

Bidirectional threshold switching characteristics in Ag/ZrO2/Pt electrochemical metallization cells

In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure

Mechanism for resistive switching in chalcogenide-based electrochemical metallization memory cells

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