The Au/ Cr/ Zr +-implanted-ZrO 2 / n +-Si sandwiched structure exhibits reversible bipolar resistive switching behavior under dc sweeping voltage. The resistance ratio ͑R ratio ͒ of high resistive state and low resistive state is as large as five orders of magnitude with 0.5 V readout bias. Zr +-implanted-ZrO 2 films exhibit good retention characteristics and high device yield. The impact of implanted Zr + ions on resistive switching performances is investigated. Resistive switching of the fabricated structures is explained by trap-controlled space charge limited current conduction.

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We use convincing experimental evidences to demonstrate that the nonpolar resistive switching phenomenon observed in Cu/ ZrO 2 :Cu/Pt memory devices conforms to afi lament formation and annihilation mechanism. Temperature-dependent switching characteristics show that am etallic filamentary channel is responsible for the low resistance state ͑ON state͒.F urther analysis reveals that the physical origin of this metallic filament is the nanoscale Cu conductive bridge. On this basis, we propose that the set process ͑switching from OFF state to ON state͒ and the reset process ͑switching from ON to OFF state͒ stem from the electrochemical reactions in the filament, in which at hermal effect is greatly involved.

Resistive switching characteristics of ZrO2 films containing gold nanocrystals (nc-Au) are investigated for nonvolatile memory applications. The sandwiched top electrode/ZrO2 (with nc-Au embedded)/n+ Si structure exhibits two stable resistance states (high-resistance state and low-resistance state). By applying proper voltage bias, resistive switching from one state to the other state can be achieved. This resistive switching behavior is reproducible and the ratio between the high and low resistances can be as high as two orders. The intentionally introduced nc-Au in ZrO2 films can improve the device yield greatly. ZrO2 films with gold nanocrystals embedded are promising to be used in the nonvolatile resistive switching memory devices.