Resistance switching in metal oxides could form the basis for next-generation non-volatile memory. It has been argued that the current in the high-conductivity state of several technologically relevant oxide materials flows through localized filaments, but these filaments have been characterized only indirectly, limiting our understanding of the switching mechanism. Here, we use high-resolution transmission electron microscopy to probe directly the nanofilaments in a Pt/TiO(2)/Pt system during resistive switching. In situ current-voltage and low-temperature (approximately 130 K) conductivity measurements confirm that switching occurs by the formation and disruption of Ti(n)O(2n-1) (or so-called Magnéli phase) filaments. Knowledge of the composition, structure and dimensions of these filaments will provide a foundation for unravelling the full mechanism of resistance switching in oxide thin films, and help guide research into the stability and scalability of such films for applications.

Electrically induced resistive switching in metal insulator-metal structures is a subject of increasing scientific interest because it is one of the alternatives that satisfies current requirements for universal non-volatile memories. However, the origin of the switching mechanism is still controversial. Here we report the fabrication of a resistive switching device inside a transmission electron microscope, made from a Pt/SiO 2 /a-Ta 2 O 5 À x /a-TaO 2 À x /Pt structure, which clearly shows reversible bipolar resistive switching behaviour. The currentvoltage measurements simultaneously confirm each of the resistance states (set, reset and breakdown). In situ scanning transmission electron microscope experiments verify, at the atomic scale, that the switching effects occur by the formation and annihilation of conducting channels between a top Pt electrode and a TaO 2 À x base layer, which consist of nanoscale TaO 1 À x filaments. Information on the structure and dimensions of conductive channels observed in situ offers great potential for designing resistive switching devices with the high endurance and large scalability.

For high density of resistive random access memory applications using NiOx films, understanding of the filament formation mechanism that occurred during the application of electric fields is required. We show the structural changes of polycrystalline NiOx (x=1–1.5) film in the set (low resistance), reset (high resistance), and switching failed (irreversible low resistance) states investigated by simultaneous high-resolution transmission electron microscopy and electron energy-loss spectroscopy. We have found that the irreversible low resistance state facilitates further increases of Ni filament channels and Ni filament density that resulted from the grain structure changes in the NiOx film.

Reproducible high-yield purification process of singlewalled carbon nanotubes was developed by combining two-step processes of thermal annealing in air and acid treatment. The process involves the thermal annealing in air with the powders rotated at temperatures of 470 °C for 50 min, which burns out the carbonaceous particles, and an acid treatment with HCl for 24 h, which etches away the catalytic metals. Control of the annealing temperature and rotation of the sample are crucial for high yield. Our reproducible optimal purification process provides a total yield of about 25 ∼ 30 wt % with less than 1 wt % of transition metals, which was confirmed by the thermogravimetric analysis. Bundling and length control depending on the different acid treatments will be further discussed.

Single-atom-catalysts (SACs) afford a fascinating activity with respect to other nanomaterials for hydrogen evolution reaction (HER), yet the simplicity of single-atom center limits its further modification and utilization. Obtaining bimetallic single-atom-dimer (SAD) structures can reform the electronic structure of SACs with added atomic-level synergistic effect, further improving HER kinetics beyond SACs. However, the synthesis and identification of such SAD structure remains conceptually challenging. Herein, systematic first-principle screening reveals that the synergistic interaction at the NiCo-SAD atomic interface can upshift the d-band center, thereby, facilitate rapid water-dissociation and optimal proton adsorption, accelerating alkaline/acidic HER kinetics. Inspired by theoretical predictions, we develop a facile strategy to obtain NiCo-SAD on N-doped carbon (NiCo-SAD-NC) via in-situ trapping of metal ions followed by pyrolysis with precisely controlled N-moieties. X-ray absorption spectroscopy indicates the emergence of Ni-Co coordination at the atomic-level. The obtained NiCo-SAD-NC exhibits exceptional pH-universal HER-activity, demanding only 54.7 and 61 mV overpotentials at −10 mA cm−2 in acidic and alkaline media, respectively. This work provides a facile synthetic strategy for SAD catalysts and sheds light on the fundamentals of structure-activity relationships for future applications.