On the reliability of DC-DC power converters

Shenai, K.; Singh, Prabjit; Rao, S.; Sorenson, D.; Chu, K.; Gaylon, G.

doi:10.1109/iecec.2000.870966

Cited by 9 publications

(2 citation statements)

References 7 publications

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“…-and -curves are not significantly influenced by the important phenomena involved inside the diode during hard switching like dynamic avalanche [30], [31], or Kirk effect [32] like in a bipolar transistor collector. Dynamic avalanche is referred to as a cause of diode failure [33], hence the necessity to render the experimental data sensitive to this latter phenomenon. Finally -characteristics are related to the ambipolar lifetime in the diode epitaxial layer only through the device voltage drop.…”

Section: Step-by-step Extraction Proceduresmentioning

confidence: 99%

On the Extraction of PiN Diode Design Parameters for Validation of Integrated Power Converter Design

Garrab

Allard

Morel

et al. 2005

IEEE Trans. Power Electron.

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Design of integrated power systems requires prototype-less approaches. Accurate simulations are necessary for analysis and verification purposes. Simulation relies on component models and associated parameters. The paper focuses on a step-by-step extraction procedure for the design parameters of a one-dimensional finite-element-method (FEM) model of the PiN diode. The design parameters are also available for diverse physics-based analytical models. The PiN diode remains a complex device to model particularly during switching transients. The paper demonstrates that a simple FEM model may be considered unknowingly of the device exact technology. Heterogeneous simulation is illustrated. The state-of-art of parameter extraction methods is briefly recalled. The proposed procedure is detailed. The diode model and extracted parameters are systematically validated from electro-thermal point-of-view. Validity domains are discussed.

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Section: Step-by-step Extraction Proceduresmentioning

confidence: 99%

On the Extraction of PiN Diode Design Parameters for Validation of Integrated Power Converter Design

Garrab

Allard

Morel

et al. 2005

IEEE Trans. Power Electron.

View full text Add to dashboard Cite

show abstract

“…The failure may be initiated by other components in the circuit. For example, extensive research and testing has shown that, power supply arcing [4], increased ESR in the output filter capacitor [5], and charge storage in the leakage inductance of the transformer [6] can initiate the field-failure of power MOSFETs in high-end computer/telecom power supplies [7].…”

Section: The Current Status Of Wide Bandgap Power Switch Reliabilitymentioning

confidence: 99%