High-power switching in semiconductors - What is beyond silicon thyristor?

Shenai, K.; Neudeck, Philip G.; Dudley, Michael; Davis, R. F.

doi:10.1109/energytech.2011.5948527

Cited by 11 publications

(6 citation statements)

References 26 publications

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“…SiC has attractive electrical properties such as high thermal conductivity (3.7 W/cm K), high breakdown field (2.5∼3.0 MV/cm versus 0.6 MV/cm for Si), and radiation resistance. 1,2 Since the high hardness and Young's modulus, SiC is very suitable as material for micro-electro-mechanical systems (MEMS) application. 3,4 However, the large amount of interface state density (D it ) in the SiO 2 /SiC interface degrades the channel mobility of SiC device.…”

mentioning

confidence: 99%

Improvement of Electrical Performance of HfO₂/SiO₂/4H-SiC Structure with Thin SiO₂

Hsu

Hwu

2013

ECS J. Solid State Sci. Technol.

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The impact of a thin interfacial SiO2 layer between HfO2 and SiC for the improvement of dielectric's electrical property was investigated. Regarding the material choice of dielectric on SiC, various combinations of HfO2 and SiO2 were examined on devices by capacitance and current measurements. It was found that the thickness of SiO2 interfacial layer is critical. As SiO2 grows thicker, excess carbon is believed to be generated in SiC close to SiC/SiO2 interface as observed by X-ray photoelectron spectroscopy. The defects induced during the growth of the SiO2 layer are believed to affect the inversion region in the substrate. Excess carbon does not behave as mobile ion when examined by bias-temperature stress, and it can induce considerable electron trapping under constant bias stress. On the other hand, large capacitance voltage (C-V) frequency dispersion appears when HfO2 is directly deposited on SiC. With 7.4 nm thin SiO2 layer between HfO2 and SiC, the C-V distortion and dispersion can be significantly eliminated. The leakage current with thin SiO2 layer was significantly reduced as compared with only HfO2 on SiC. Thin SiO2 (7.4) layer is beneficial to 4H-SiC MOS capacitors with respect to their dielectric and passivation properties.

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confidence: 99%

Improvement of Electrical Performance of HfO₂/SiO₂/4H-SiC Structure with Thin SiO₂

Hsu

Hwu

2013

ECS J. Solid State Sci. Technol.

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“…Thus it is very important to note that all commercial 4H-SiC power devices contain an abundance of non-micropipe dislocation defects. These dislocation defects have proven more difficult to observe in part because they have less immediately obvious negative impact on 4H-SiC device performance than micropipes, but are likely to cause severe field-reliability problems [19].…”

Section: Discussionmentioning

confidence: 99%

On The De-Rating of 4H-Silicon Carbide (SiC) Power Schottky Barrier Diodes

Shenai¹

2013

ECS Trans.

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Silicon Carbide (SiC) is the most promising material among all wide bandgap semiconductors for high-voltage and hightemperature power electronics. A careful analysis of the current state-of-the-art commercial 4H-SiC power Schottky Barrier Diodes (SBDs) indicates that these devices are operated well below their true avalanche breakdown potential. It is shown that the breakdown voltage ratings of commercial 4H-SiC power SBDs are lower than a factor of 2 compared to their true avalanche breakdown capability. A simple analysis is presented to determine the de-rating factor of 4H-SiC power SBDs using the information provided in the manufacturer's data sheets. The device de-ratings appear to be primarily due to a high-density of crystal defects in the drift-region of the device.

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“…Single-chip power Junction Barrier Schottky (JBS) diodes rated up to 1,700V/25A; power MOSFET's rated up to 1,200V/50A; and, power JFET's rated up to 1,700V/4Aall fabricated on 4H-SiC material are now commercially available. Although these devices are finding increasing applications in computer/telecom power supplies, motor control, and smart grid [3][4][5], serious concerns pertaining to longterm reliability of these devices in compact power converters under stressful field operating conditions remain [6]. For example, most SiC power devices are not dv/dt-and avalanche-rated, and the data sheets make no mention of the Safe-Operating Area (SOA), especially above room temperature.…”

Section: Introductionmentioning

confidence: 99%

Voltage Switching Limits of Lateral GaN Power Devices

Shenai

2013

ECS Trans.

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The dv/dt switching limitations of power semiconductor devices are evaluated in a boost (PFC) power converter using circuit simulations. State-of-the-art commercial silicon CoolMOS devices, commercial Silicon Carbide (SiC) Junction Barrier Schottky (JBS) diodes, and emerging Gallium Nitride (GaN) lateral power transistors are considered. It is shown that although SiC and GaN power devices have low stored charge and small capacitances, they experience high switching dv/dt stresses which may pose serious switching limitations especially in high-frequency power converters. This problem is likely to be further exacerbated by the presence of a high density of crystal defects in SiC and GaN materials which will manifest in the form of poor field-reliability. Specific guidelines for device selection are recommended in order to optimize both performance and field-reliability.

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High-power switching in semiconductors - What is beyond silicon thyristor?

Cited by 11 publications

References 26 publications

Improvement of Electrical Performance of HfO₂/SiO₂/4H-SiC Structure with Thin SiO₂

Improvement of Electrical Performance of HfO₂/SiO₂/4H-SiC Structure with Thin SiO₂

On The De-Rating of 4H-Silicon Carbide (SiC) Power Schottky Barrier Diodes

Voltage Switching Limits of Lateral GaN Power Devices

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High-power switching in semiconductors - What is beyond silicon thyristor?

Cited by 11 publications

References 26 publications

Improvement of Electrical Performance of HfO2/SiO2/4H-SiC Structure with Thin SiO2

Improvement of Electrical Performance of HfO2/SiO2/4H-SiC Structure with Thin SiO2

On The De-Rating of 4H-Silicon Carbide (SiC) Power Schottky Barrier Diodes

Voltage Switching Limits of Lateral GaN Power Devices

Contact Info

Product

Resources

About

Improvement of Electrical Performance of HfO₂/SiO₂/4H-SiC Structure with Thin SiO₂

Improvement of Electrical Performance of HfO₂/SiO₂/4H-SiC Structure with Thin SiO₂