On the recombination behaviour of iron in moderately boron-doped p-type silicon

Walz, D.; Joly, Jean‐Pierre; Kamarinos, G.

doi:10.1007/bf01594232

Cited by 30 publications

(33 citation statements)

References 26 publications

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“…The deviations are more pronounced for higher lifetimes and can nearly be neglected for measurements with low injection lifetimes below 5 µs. All these observations are in good agreement with earlier results (5,6).…”

Section: Bpc Measurement Resultssupporting

confidence: 95%

Detailed Photocurrent Analysis of Iron Contaminated Boron Doped Silicon by Comparison of Simulation and Measurement

2007

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In this work, an extensive injection level dependent carrier lifetime study on intentionally iron contaminated boron-doped silicon has been performed by using the Elymat carrier lifetime method. The influence of both, iron and boron concentrations is investigated. Results from both Elymat measurement modes are considered and critically compared with simulations. The results clearly indicate that for low injection conditions, surface passivation with diluted HF is not sufficient whereas so-called electrostatic passivation allows for correct lifetime measurements. For the first time, results from both Elymat measurement modes are modeled consistently. The results prove that using optimized measurement and evaluation procedures the Elymat method is an appropriate technique for the quantitative determination of iron in case of iron being the relevant contaminant in boron doped silicon.

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Section: Bpc Measurement Resultssupporting

confidence: 95%

Detailed Photocurrent Analysis of Iron Contaminated Boron Doped Silicon by Comparison of Simulation and Measurement

2007

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“…The determination of the capture cross section σ n and σ p after oxidation reveals that the values coincide perfectly with those related to the iron-boron pair (FeB) impurities, as reported by D. Walz et al [12]. Therefore, we can assume that the degradation of the minority carrier lifetime under the oxidation is mainly due to the iron contamination.…”

Section: Temperatures Of 850supporting

confidence: 86%

Investigation of Degradation of Electrical Properties after Thermal Oxidation of p-Type Cz-Silicon Wafers

et al. 2017

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In this study we conducted thermal oxidation of Czochralski p-type <100> silicon wafers. The oxidation was carried out at temperatures in the range of 850-1000• C, in a gas mixture of N2:O2, in order to deposit a thin layer (10 nm) of thermal silicon dioxide (SiO2), generally used in the surface passivation of solar cells. The measurements of effective minority carriers lifetime τ eff using the quasi-steady-state photoconductance have shown degradation of different samples after oxidation process. The calculation of surface recombination velocity after the oxidation process at different temperatures, gave the same value of 40 cm s −1 , showing a low surface recombination velocity and, therefore, a good surface passivation. Finally, a study based on sample illumination technique, allowed us to conclude that our samples are dominated by bulk Shockley-Read-Hall recombination, caused by Fe-related centers, thereby causing the degradation of the lifetime of minority carriers.

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“…The fact that SPV can (and should) be used under low-injection conditions is a signi®cant advantage of the technique with respect to other methods which rely on high-level excitation, such as mPCD or ELYMAT [428,430,551]. In the latter techniques, the obtained lifetime cannot be directly related to the minority carriers without further information.…”

Section: Limitations and Solutionsmentioning

confidence: 99%