On the Physical Behavior of Cryogenic IV and III–V Schottky Barrier MOSFET Devices

Schwarz, Mike; Calvet, Laurie E.; Snyder, John P.; Krauss, Tillmann; Schwalke, Udo; Kloes, Alexander

doi:10.1109/ted.2017.2726899

Cited by 29 publications

(9 citation statements)

References 33 publications

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“…The overall current is modeled by a combination of these processes. Room temperature transport processes at the SB junctions that are used for transistors are most typically fully described by transport over the barrier via thermionic emission (TE), and direct/thermal assisted tunneling through the barrier [9], which are therefore the focus of this section.…”

Section: Current Transportmentioning

confidence: 99%

“…It was often considered as a device that would always perform worse than a conventional MOSFET because of the increased source/drain resistance. While simulations have shown that for very small devices, the SB can be an asset, they have not been commercially viable to date [7][8][9]. Some of the advantages that they still afford, such as economy of fabrication, may prove them yet to be an exploitable technology as the increased environmental and monetary costs of computing become more problematic.…”

Section: Introductionmentioning

confidence: 99%

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The Schottky barrier transistor in emerging electronic devices

et al. 2023

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This paper explores how the Schottky barrier (SB) transistor is used in a variety of applications and material systems. A discussion of SB formation, current transport processes, and an overview of modeling are first considered. Three discussions follow, which detail the role of SB transistors in high performance, ubiquitous and cryogenic electronics. For high performance computing, the SB typically needs to be minimized to achieve optimal performance and we explore the methods adopted in carbon nanotube technology and two-dimensional electronics. On the contrary for ubiquitous electronics, the SB can be used advantageously in source-gated transistors and reconfigurable FETs for sensors, neuromorphic hardware and security applications. Similarly, judicious use of a SB can be an asset for applications involving Josephson junction FETs.

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Section: Current Transportmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The Schottky barrier transistor in emerging electronic devices

et al. 2023

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“…An independent-gate ambipolar SB-FinFET has two conduction modes, depending on the size of SB height dictated by the choice of S/D contact metal. [15] The presence of SB at the contacts ''lifts up'' the potential at the end of the channel that would otherwise slip away from gate control due to the depletion fields of S/D junctions, thus improving device scalability. According to Fig.…”

Section: Device Structures and Modelingmentioning

confidence: 99%

Ultracompact and Low-Power Logic Circuits via Workfunction Engineering

Canan

Kaya

Kodi

et al. 2019

IEEE J. Explor. Solid-State Comput. Devices Circuits

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An extensive analysis of sub-10-nm logic building blocks utilizing ultracompact logic gates based on recently proposed gate workfunction engineering (WFE) approach is provided. WFE sets the WF in the contacts as well as two independent gates of an ambipolar Schottky-barrier (SB) FinFET to alter the threshold of two channels, as a unique leverage to modify the logic functionality out of a single transistor. Thus, a single transistor (1T) CMOS pass-gate, 2T NAND and NOR gates as well as 3T or 4T XOR gates with substantial reduction in overall area (50%) and power (up to ×10) dissipation can be implemented. To harness this potential and illustrate the capabilities of these compact ambipolar transistors, novel logic building blocks, including 6T multiplexer, 8T full-adder, 4T latch, 6T D-type flip-flop, and 4T AND-OR-invert (AOI) gates, are developed. Besides the logic verification using 7-nm devices, the dynamic performance of the proposed logic circuits is also analyzed. The comparative simulation study shows that WFE in independent-gate SB-FinFETs can lead to absolutely minimalist CMOS logic blocks without significant degradation to overall power-delay product (PDP) performance. INDEX TERMS 3T-XOR, 4T AND-OR-invert (AOI), 6T 4-to-1 multiplexer (MUX), ambipolar, CMOS logic gates, nanotechnology, Schottky-barrier MOSFET, tunneling.

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“…Among the innovative devices capable of enabling novel scaling paradigms, reconfigurable field-effect transistors (RFETs) [5] deserve to be mentioned thanks to their inherent polarity control features [6] that can be applied in the fields of energy efficiency devices [7] and multifunctional circuit design. [8] While both pertinence and benefits of this technology were already discussed in several works for either high [9,10] and low [11] temperature applications in the past, newer and more complex concepts of RFET devices, featuring for example multiple independent gates, [12,13] have been developed and must be characterized in terms of their temperature-dependent behavior. Beyond developing a better understanding of the operation of such devices in order to extend to different environmental conditions their applicability in fields where it was already suggested or proven, like hardware security, [14][15][16] it is important to point out how RFETs can successfully overcome many limitations typical for standard devices such as MOSFETs, thanks to their intrinsically distinct working principle.…”

Section: Introductionmentioning

confidence: 99%

Insights into the Temperature‐Dependent Switching Behavior of Three‐Gated Reconfigurable Field‐Effect Transistors

Galderisi

Beyer

Mikolajick

et al. 2023

Physica Status Solidi (a)

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Three‐gated reconfigurable field‐effect transistors are innovative nanoelectronic devices that are rapidly and increasingly attracting substantial interest in several fields of application thanks to their inherent n/p‐type reconfiguration capabilities. For this reason, it is of significant importance to acquire a deeper knowledge about the temperature ranges in which such devices can be operated and, at the same time, gather a better understanding of the physical mechanisms that are involved in their operation. To achieve this aim, in‐depth observations about the functioning of such devices in an ultrawide temperature range, spanning from 80 to 475 K, are performed and are presented for their ambipolar and low V normalT operation modes. In view of the data exhibited herein, it is possible to assess the performances of three‐gated reconfigurable field‐effect transistors within a considerable temperature span and finally provide significant insights on the temperature‐dependent physical mechanisms regulating their functionality.

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On the Physical Behavior of Cryogenic IV and III–V Schottky Barrier MOSFET Devices

Cited by 29 publications

References 33 publications

The Schottky barrier transistor in emerging electronic devices

The Schottky barrier transistor in emerging electronic devices

Ultracompact and Low-Power Logic Circuits via Workfunction Engineering

Insights into the Temperature‐Dependent Switching Behavior of Three‐Gated Reconfigurable Field‐Effect Transistors

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