Insights into the Temperature‐Dependent Switching Behavior of Three‐Gated Reconfigurable Field‐Effect Transistors

Abstract

Three‐gated reconfigurable field‐effect transistors are innovative nanoelectronic devices that are rapidly and increasingly attracting substantial interest in several fields of application thanks to their inherent n/p‐type reconfiguration capabilities. For this reason, it is of significant importance to acquire a deeper knowledge about the temperature ranges in which such devices can be operated and, at the same time, gather a better understanding of the physical mechanisms that are involved in their operation. To achieve this aim, in‐depth observations about the functioning of such devices in an ultrawide temperature range, spanning from 80 to 475 K, are performed and are presented for their ambipolar and low V normalT operation modes. In view of the data exhibited herein, it is possible to assess the performances of three‐gated reconfigurable field‐effect transistors within a considerable temperature span and finally provide significant insights on the temperature‐dependent physical mechanisms regulating their functionality.

The RGATE: An 8-in-1 Polymorphic Logic Gate Built From Reconfigurable Field Effect Transistors

“…On-currents of 3.8 (2.4) µA/µm are reported for n-type (p-type) devices, independent of the selected V T mode. A more detailed characterization of the different operation modes under various conditions is reported in [23].…”