The Schottky barrier transistor in emerging electronic devices

Abstract

This paper explores how the Schottky barrier (SB) transistor is used in a variety of applications and material systems. A discussion of SB formation, current transport processes, and an overview of modeling are first considered. Three discussions follow, which detail the role of SB transistors in high performance, ubiquitous and cryogenic electronics. For high performance computing, the SB typically needs to be minimized to achieve optimal performance and we explore the methods adopted in carbon nanotube technology and two-dimensional electronics. On the contrary for ubiquitous electronics, the SB can be used advantageously in source-gated transistors and reconfigurable FETs for sensors, neuromorphic hardware and security applications. Similarly, judicious use of a SB can be an asset for applications involving Josephson junction FETs.

Understanding the Electronic Transport of Al–Si and Al–Ge Nanojunctions by Exploiting Temperature-Dependent Bias Spectroscopy

“…Thus, tunneling does not contribute to charge carrier injection. As shown in (2), further bending the bands by operating the device in stronger accumulation (V TG ≪ 0 V) TFE/FE gets more dominant due to the fact that the SB is getting thinner, allowing a stronger tunneling contribution, which gets evident by a shallower slope. 31 Interestingly, V K shifts from −1.95 V at…”

“…Nanowire (NW)-based Schottky barrier (SB) metal–semiconductor–metal (MSM) heterostructures are highly interesting for emerging applications in nanoelectronics , and quantum electronics , that take advantage of their unique physical, electrical, and photonic as well as plasmonic properties. , Having such a MSM structure allows to electrostatically tune the metal–semiconductor junctions as well as the channel’s energy landscape through its implementation in a SB field-effect transistor (SBFET) . In this respect, undoped SBFETs show a certain degree of ambipolar charge carrier injection of electrons and holes into the channel, enabling dedicated “More than Moore” paradigms, e.g., reconfigurable FETs (RFETs). , Importantly, the source/drain contact metal is of high relevance in defining the charge carrier injection capabilities.…”

“…Nanowire (NW)-based Schottky barrier (SB) metal–semiconductor–metal (MSM) heterostructures are highly interesting for emerging applications in nanoelectronics 1 , 2 and quantum electronics 3 , 4 that take advantage of their unique physical, electrical, and photonic as well as plasmonic properties. 5 , 6 Having such a MSM structure allows to electrostatically tune the metal–semiconductor junctions as well as the channel’s energy landscape through its implementation in a SB field-effect transistor (SBFET).…”

“… 5 , 6 Having such a MSM structure allows to electrostatically tune the metal–semiconductor junctions as well as the channel’s energy landscape through its implementation in a SB field-effect transistor (SBFET). 2 In this respect, undoped SBFETs show a certain degree of ambipolar charge carrier injection of electrons and holes into the channel, enabling dedicated “More than Moore” paradigms, e.g., reconfigurable FETs (RFETs). 7 , 8 Importantly, the source/drain contact metal is of high relevance in defining the charge carrier injection capabilities.…”

Editorial for ‘focus collection in memory of Prof Mark A Reed’

“…In particular, this collection features 3 topical reviews. A review focuses on how Schottky barrier source and drain transistors, the thesis topic of L Calvet who was a former member of Mark Reed's group, are used in emerging devices [5]. Another review written by three former members (J Chen, T Lee, and C Zhou) summarizes Mark Reed's seminal work in the field of molecular electronics [6].…”