On the mechanism of carrier transport in metal-thin-oxide semiconductor diodes on Polycrystalline silicon

Kar, S.; Panchal, K.M.; Bhattacharya, Shuvajit; Varma, S.

doi:10.1109/t-ed.1982.21039

Cited by 31 publications

(11 citation statements)

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“…The capacitance and conductance are quite sensitive at high temperatures and low frequencies. The increase in capacitance towards the low-frequency region may be due to interfacial space charge formation [24,25].…”

Section: Electrical Propertiesmentioning

confidence: 99%

Temperature and frequency dependent electrical and dielectric properties of Al/SiO2/p-Si (MOS) structure

Tataroğlu

Altındal

Bülbül

2005

Microelectronic Engineering

179

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Section: Electrical Propertiesmentioning

confidence: 99%

Temperature and frequency dependent electrical and dielectric properties of Al/SiO2/p-Si (MOS) structure

Tataroğlu

Altındal

Bülbül

2005

Microelectronic Engineering

179

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“…More recently, experimental results have been shown for MS, MIS, and solar cells. [10][11][12][13][14] Very interesting studies among these were presented by Kar et al 10 and Cao et al, 11 where the results indicated the likelihood of a primary currenttransport mechanism being multistep tunneling and defectassisted tunneling instead of TE, respectively. Evstropov et al 12,13 and Balyaev et al 14 showed that the current flow in the III-V heterojunctions is generally governed by multistep tunneling with the involvement of dislocations even at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Dislocation-governed current-transport mechanism in (Ni/Au)–AlGaN/AlN/GaN heterostructures

Arslan

Altındal

Özçelik

et al. 2009

Journal of Applied Physics

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The current-transport mechanisms in ͑Ni/ Au͒ -Al 0,22 Ga 0,78 N / AlN/ GaN heterostructures were studied by using temperature dependent forward-bias current-voltage ͑I-V͒ characteristics in the temperature range of 80-410 K. In order to determine the current mechanisms for ͑Ni/ Au͒ -Al 0,22 Ga 0,78 N / AlN/ GaN heterostructures, we fitted the experimental I-V data to the analytical expressions given for the current-transport mechanisms in a wide range of applied biases and at different temperatures. The contributions of thermionic-emission, generation-recombination, tunneling, leakage currents that are caused by inhomogeneities, and defects at the metal-semiconductor interface current mechanisms were all taken into account. The best fitting results were obtained for the tunneling current mechanism. On the other hand, we did not observe sufficient agreement between the experimental data and the other current mechanisms. The temperature dependencies of the tunneling saturation current ͑I t ͒ and tunneling parameters ͑E 0 ͒ were obtained from fitting results. We observed a weak temperature dependence of the saturation current and the absence of the temperature dependence of the tunneling parameters in this temperature range. The results indicate that in the temperature range of 80-410 K, the mechanism of charge transport in the ͑Ni/ Au͒ −Al 0.22 Ga 0.78 N / AlN/ GaN heterostructure is performed by tunneling among those dislocations intersecting the space charge region. The dislocation density ͑D͒ that was calculated from the I-V characteristics, according to a model of tunneling along the dislocation line, gives the value of 0.24ϫ 10 7 cm −2 . This value is close in magnitude to the dislocation density that was obtained from the x-ray diffraction measurements.

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“…On the other hand, a simultaneous contribution from two or more mechanisms could also be possible. Recently, there are a lot of studies in the literature about currenttransport mechanisms of MS, MIS and solar cells [19][20][21][31][32][33][34]. Among them, Kar et al [31], Cao et al [32] and Özdemir et al [19] presented very interesting studies, where the results indicated the likelihood of a primary current-transport mechanism to be multistep tunneling and defect assisted tunneling instead of TE, respectively.…”

Section: Introductionmentioning

confidence: 99%

“…Recently, there are a lot of studies in the literature about currenttransport mechanisms of MS, MIS and solar cells [19][20][21][31][32][33][34]. Among them, Kar et al [31], Cao et al [32] and Özdemir et al [19] presented very interesting studies, where the results indicated the likelihood of a primary current-transport mechanism to be multistep tunneling and defect assisted tunneling instead of TE, respectively. Evstropov et al [33], Balyaev et al [34], Arslan et al [20] and Bengi et al [21] showed that the current flow in the III-V heterojunctions is generally governed by multistep tunneling with the involvement of dislocations even at room temperature and with low doping concentrations.…”

Section: Introductionmentioning

confidence: 99%

On the mechanism of current-transport in Cu/CdS/SnO2/In–Ga structures

Uslu

Altındal

Polat

et al. 2011

Journal of Alloys and Compounds

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On the mechanism of carrier transport in metal-thin-oxide semiconductor diodes on Polycrystalline silicon

Cited by 31 publications

References 0 publications

Temperature and frequency dependent electrical and dielectric properties of Al/SiO2/p-Si (MOS) structure

Temperature and frequency dependent electrical and dielectric properties of Al/SiO2/p-Si (MOS) structure

Dislocation-governed current-transport mechanism in (Ni/Au)–AlGaN/AlN/GaN heterostructures

On the mechanism of current-transport in Cu/CdS/SnO2/In–Ga structures

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