Temperature and frequency dependent electrical and dielectric properties of Al/SiO2/p-Si (MOS) structure

Frequency Dependent Dielectric Properties of ZnSe/p-Si Diode

“…At various frequencies, the real part of * named as dielectric constant ( ′ ), and the imaginary part as dielectric loss ( ′′ ) are calculated using the measured capacitance ( ) and conductance ( / ) values at the strong accumulation region as [11,21,22 Fig.1 and these values are found in decreasing behavior with increase in frequency, whereas ′ shows a frequency independent nature of the parameter in the negative voltage region. Since and / are sensitive to the interface properties and also parasitic resistances, this inverse relation can be explained with the change in the response time of the interfacial dipole orientation to the applied field [21,23]. The increase of the capacitance depends on the ability of the charge carrier concentration to follow the applied ac signal [11] and so that these carriers at the localized interface states can hop between a pair of these centers having different dipole orientations.…”

“…The increase of the capacitance depends on the ability of the charge carrier concentration to follow the applied ac signal [11] and so that these carriers at the localized interface states can hop between a pair of these centers having different dipole orientations. However, as decreasing in the polarization at high frequencies, dipoles could not follow this action of the ac field without having enough time to relax in equilibrium and therefore to give a response to the ac signal [23]. The dispersion behavior shown in Fig.1 can be due to the inhomogeneity in the diode with the effect of accumulation of the charges at the boundary of less conducting regions and interfacial polarization [11,20,24].…”

“…* can be used to analyze the relaxation properties of ZnSe/p-Si diode [21,23]. In fact, these analysis of * within the * formalism is commonly used to separate the bulk and the surface phenomena and to determine the bulk dc conductivity of the material [32].…”

“…Additionally, * can be used to monitor the electrical properties of the material and is a useful technique to investigate the influences of frequency on the relaxation processes [33]. As a simply geometric inverse of the admittance, * can be written as * = 1⁄ [23,28]. As shown in Fig.4, ′ increases with increase in frequency and decrease in voltage, and an inverse behavior with frequency is observed in ′′ .…”

On the Frequency C-V and G-V Characteristics of Au/Poly (3-Substituted thiophene) (P3DMTFT)/n-GaAs Schottky Barrier Diodes

“…Negative capacitance (NC) and anomalous peak have been observed in the forward bias C-V characteristics of MS or MIS SBDs [10][11][12][13][14][15][16][17][18]. The NC has been attributed to the interface states, the contact injection and minority carrier injection effects * corresponding author; e-mail: farukozdemir@sdu.edu.tr and the anomalous peak can occur due to interface states (N ss ) and R s [19,20]. The NC effect reported in the literature has been referred to as "anomalous" or "abnormal" [12].…”