2020
DOI: 10.1007/s11665-020-04925-4
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On the Issue of Crack Formation in a Thin Dielectric Layer on Silicon under Thermal Shock

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Cited by 6 publications
(7 citation statements)
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“…2 a and b shows the typical results of these studies. The obtained curves are described by the well-known equation [ 15 ]: …”
Section: Resultsmentioning
confidence: 99%
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“…2 a and b shows the typical results of these studies. The obtained curves are described by the well-known equation [ 15 ]: …”
Section: Resultsmentioning
confidence: 99%
“…This presence was necessary to control the quality of metal film adhesion, the homogeneity of its heating, and local defect formation along the track. The temperature dynamics of the metallization track T 1 (t) was calculated based on changes in the voltage drop U(t) : where R 0 = 0.88 Ω is the resistance of the metallization track at T 0 = 290 K measured using the voltmeter-ammeter method and α = 0.0043 K −1 is the aluminum temperature resistance coefficient [ 15 ].
Fig.
…”
Section: Methodsmentioning
confidence: 99%
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“…The dielectric properties of polymers are generally characterized by permittivity, dielectric loss, and dielectric breakdown strength (DBS), all of which are attributed to the types of polarizations within the polymer 25 . Energy loss is the inherit loss of electromagnetic energy in the form of heat, which includes dielectric loss and discharge loss.…”
Section: Introductionmentioning
confidence: 99%
“…Experimental studies were carried out according to the method [9,10] on a setup comprising a pulse generator based on high-capacity capacitors C = 4000 µF (maximum amplitude of the square current pulse and pulse duration did not exceed I max = 150 A and τ max = 2 ms respectively with the sample resistance not more than R max = 1 , the steepness of the leading and trailing edges was 7 and 10 µs respectively), a digital storage oscillograph and optical microscope to record the " thermal" fracture processes of metallization systems [11].…”
mentioning
confidence: 99%