On the formation of silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiO x :H (0 &lt; x &lt; 2) with time-modulated dc magnetron plasma

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On the formation of silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiO x :H (0 < x < 2) with time-modulated dc magnetron plasma

Cited by 3 publications

References 40 publications

Effect of annealing in oxidizing atmosphere on optical and structural properties of silicon suboxide thin films obtained by gas-jet electron beam plasma chemical vapor deposition method

Effect of annealing in oxidizing atmosphere on optical and structural properties of silicon suboxide thin films obtained by gas-jet electron beam plasma chemical vapor deposition method

Effect of the Temporal Characteristics of Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase on ncl-Si Growth in an a-SiOx:H matrix ( $${{C}_{{{{{\text{O}}}_{{\text{2}}}}}}}$$ = 15.5 mol %)

Formation of ncl-Si in the Amorphous Matrix a-SiOx:H Located near the Anode and on the Cathode, Using a Time-Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase ($${{{\text{C}}}_{{{{{\text{O}}}_{2}}}}}$$ = 21.5 mol %)

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