Formation of ncl-Si in the Amorphous Matrix a-SiOx:H Located near the Anode and on the Cathode, Using a Time-Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase ($${{{\text{C}}}_{{{{{\text{O}}}_{2}}}}}$$ = 21.5 mol %)

Undalov, Yu. K.; Теруков, Е. И.; Трапезникова, И. Н.

doi:10.1134/s1063782619110228

Cited by 3 publications

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“…Dielectric SiO 2 , Si 3 N 4 , and Al 2 O 3 films containing nanocrystals (nc-Si) and nanoclusters (ncl-Si) of silicon are of great interest to researchers because, due to dimensional quantization, such films can produce photo-and electroluminescence at 300 K [1][2][3][4][5][6]. At the same time, the sizes of silicon nanoclusters/nanocrystals determine the range of their photoluminescence.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, to increase the efficiency of PL in such films, the passivation of broken bonds on the nc-Si surface with oxygen or hydrogen is required, and this can be attained by high-temperature annealing [3,20]. On the other hand, high-temperature annealing is widely used as one of the technological stages in the formation of Si nanocrystals from films of nonstoichiometric oxides SiO x (1 < x < 2) obtained by low-temperature processes, such as ion-plasma-or plasma-enhanced chemical vapor deposition (PECVD) [1,2,[21][22][23]. However, annealing can lead to an increase in the size of the nanocrystals as a result of their coalescence or due to a segregation process on the surface of elementary silicon recovered from non-stoichiometric oxide during their exposure to high temperature [24,25].…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, in the case of hydrogen surface passivation of silicon nanoclusters, their optical band gap (∆E g opt ) is close in value to that of silicon nanocrystals of the same size [27]. In this regard, a low-temperature technology for the formation of SiO x films with ncl-Si using chemical deposition of a plasma-stimulated gas mixture Ar + SiH 4 + O 2 (PECVD) with DC discharge modulation is rather interesting [2]. This technology makes it possible to obtain sufficiently thick amorphous films (about 400 nm), despite the fact that an increase in the thickness of the film to d ≈ 100 nm can lead to its spontaneous crystallization even at 300 K [28].…”

Section: Introductionmentioning

confidence: 99%

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Effect of Plasma Oxygen Content on the Size and Content of Silicon Nanoclusters in Amorphous SiOx Films Obtained with Plasma-Enhanced Chemical Vapor Deposition

Terekhov,

Terukov,

Undalov

et al. 2023

Symmetry

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The influence of Ar + SiH4 + O2 plasma formulation on the phase composition and optical properties of amorphous SiOx films with silicon nanoclusters obtained using PECVD with DC discharge modulation was studied. Using a unique technique of ultrasoft X-ray emission spectroscopy, it was found that at a 0.15 mol.% plasma oxygen content, amorphous silicon a-Si films are formed. At a high oxygen content (≥21.5 mol.%), nanocomposite films based on SiOx silicon suboxide containing silicon nanoclusters ncl-Si are formed. It was found that the suboxide matrix consists of a mixture of SiO1.3 and SiO2 phases, and the average oxidation state x in the SiOx suboxide matrix is ~1.5. An increase in the concentration of O2 in the reactor atmosphere from 21.5 to 23 mol.% leads to a decrease in ncl-Si content from 40 to 15% and an increase in the average oxidation state x of SiOx from 1.5 to 1.9. In this case, the suboxide matrix consists of two phases of silicon dioxide SiO2 and non-stoichiometric silicon oxide SiO1.7. Thus, according to the experimental data obtained using USXES, the phase composition of these films in pure form differs in their representation in both random coupling and random mixture models. A decrease in the ncl-Si content of SiOx films is accompanied by a decrease in their sizes from ~3 to ~2 nm and a shift in the photoluminescence band from 1.9 eV to 2.3 eV, respectively.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effect of Plasma Oxygen Content on the Size and Content of Silicon Nanoclusters in Amorphous SiOx Films Obtained with Plasma-Enhanced Chemical Vapor Deposition

Terekhov,

Terukov,

Undalov

et al. 2023

Symmetry

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“…Moreover, if low-temperature processes (such as ion-plasma, plasma-chemical, etc.) are used to create a silicon structure, it is possible to form [1][2][3][4] amorphous a-SiO x :H films with nanoclusters (ncl-Si), whose size will determine the luminescence region. In case of high-temperature processes at T ≥ 1000 °C, as this occurs during radiation annealing of ion-implanted samples with large doses of silicon [5] or during annealing of nonstoichiometric oxides [5][6][7][8]it is possible to form silicon nanocrystals in the dielectric film matrix.…”

Section: Introductionmentioning

confidence: 99%

“…It was shown in [1,3,4] that by using the modulated plasma of a DC-magnetron in a chamber containing 80 % Ar + 20 % SiH 4 , it is possible to set the number of ncl-Si nanoclusters in amorphous a-SiO x :H films over a wide range, and thus it is easy to control the optical properties of the films. Therefore, it can be interesting to transform amorphous a-SiO x films with nanoclusters into films with silicon nanocrystals by high-temperature annealing.…”

Section: Introductionmentioning

confidence: 99%

Structural Rearrangement of a-SiOx:H Films with Pulse Photon Annealing

Терехов

Теруков

Undalov

et al. 2020

kcmf

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Amorphous SiOx films with silicon nanoclusters are a new interesting material from the standpoint of the physics, technology, and possible practical applications, since such films can exhibit photoluminescence due to size quantization. Moreover, the optical properties of these structures can be controlled by varying the size and the content of silicon nanoclusters in the SiOx film, as well as by transforming nanoclusters into nanocrystals by means of high-temperature annealing. However, during the annealing of nonstoichiometric silicon oxide, significant changes can occur in the phase composition and the structure of the films. The results of investigations on the crystallization of silicon nanoclusters in a SiOx matrix have shownthat, even a very fast method of annealing using PPA leads to the formation of large silicon crystallites. This also causes the crystallization of at least a part of the oxide phase in the form of silicon hydroxide H6O7Si2. Moreover, in films with an initial content of pure silicon nanoclusters ≤ 50%, during annealing a part of the silicon is spent on the formation of oxide, and part of it is spent on the formation of silicon crystals. While in a film with an initial concentration of silicon nanoclusters ≥ 53%, on the contrary, upon annealing, there occurs a partial transition of silicon from the oxide phase to the growth ofSi crystals Reference 1. Undalov Y. K., Terukov E. I., Silicon nanoclustersncl-Si in a hydrogenated amorphous silicon suboxidematrix a-SiOx:H (0 < x < 2). Semiconductors. 2015;49(7):867- 878. DOI: https://doi.org/10.1134/S10637826150702222. Kim K. H., Johnson E. V., Kazanskii A. G.,Khenkin M. V., Roca P. Unravelling a simple methodfor the low temperature synthesis of siliconnanocrystals and monolithic nanocrystalline thinfilms. Scientific Reports. 2017;7(1) DOI: https://doi.org/10.1038/srep405533. Undalov Y. K., Terukov E. I., Trapeznikova I. N.Formation of ncl-Si in the amorphous matrix a-SiOx-:H located near the anode and on the cathode, usinga time-modulated DC plasma with the (SiH4–Ar–O2)gas phase (Co2 = 21.5 mol%). Semiconductors.2019;53(11): 1514–1523. DOI: https://doi.org/10.1134/S10637826191102284. Terekhov V. A., Terukov E. I., Undalov Y. K.,Parinova E. V., Spirin D. E., Seredin P. V., Minakov D. A.,Domashevskaya E. P. Composition and optical propertiesof amorphous a-SiOx:H films with silicon nanoclusters.Semiconductors. 2016;50(2): 212–216. DOI:https://doi.org/10.1134/S10637826160202515. Terekhov V. A., Turishchev S. Y., Kashkarov V. M.,Domashevskaya E. P., Mikhailov A. N., Tetel’baum D. I.Silicon nanocrystals in SiO2 matrix obtained by ionimplantation under cyclic dose accumulation. PhysicaE: Low-dimensional Systems and Nanostructures.2007;38(1-2): 16–20. DOI: https://doi.org/10.1016/j.physe.2006.12.0306. Terekhov V. A., Turishchev S. Y., Pankov K. N.,Zanin I. E., Domashevskaya E. P., Tetelbaum D. I.,Mikhailov A. N., Belov A. I., Nikolichev D. E., Zubkov S. Y.XANES, USXES and XPS investigations of electronenergy and atomic structure peculiarities of the siliconsuboxide thin film surface layers containing Si nanocrystals.Surface and Interface Analysis. 2010;42(6-7):891–896. DOI: https://doi.org/10.1002/sia.33387. Terekhov V. A., Turishchev S. Y., Pankov K. N.,Zanin I. E., Domashevskaya E. P., Tetelbaum, MikhailovA. N., Belov A. I., Nikolichev D. E. Synchrotron investigationsof electronic and atomic-structure peculiaritiesfor silicon-oxide films’ surface layers containingsilicon nanocrystals. Journal of Surface Investigation.X-ray, Synchrotron and Neutron Techniques. 2011;5(5):958–967. DOI: https://doi.org/10.1134/S102745101110020X8. Sato K., Izumi T., Iwase M., Show Y., Morisaki H.,Yaguchi T., Kamino T. Nucleation and growth of nanocrystallinesilicon studied by TEM, XPS and ESR.Applied Surface Science. 2003;216 (1-4): 376–381. DOI:https://doi.org/10.1016/S0169-4332(03)00445-89. Ledoux G., Gong J., Huisken F., Guillois O., ReynaudC. Photoluminescence of size-separated siliconnanocrystals: Confirmation of quantum confinement.Applied Physics Letters. 2002;80(25): 4834–4836. DOI:https://doi.org/10.1063/1.148530210. Patrone L., Nelson D., Safarov V. I., Sentis M.,Marine W., Giorgio S. Photoluminescence of siliconnanoclusters with reduced size dispersion producedby laser ablation. Journal of Applied Physics. 2000;87(8):3829–3837. DOI: https://doi.org/10.1063/1.37242111. Takeoka S., Fujii M., Hayashi S. Size-dependentphotoluminescence from surface-oxidized Si nanocrystalsin a weak confinement regime. Physical ReviewB. 2000;62(24): 16820–16825. DOI: https://doi.org/10.1103/PhysRevB.62.1682012. Ievlev V. M. Activation of solid-phase processesby radiation of gas-discharge lamps, Russian ChemicalReviews. 2013;82(9): 815–834. DOI: https://doi.org/10.1070/rc2013v082n09abeh00435713. Zimkina T. M., Fomichev V. A. Ultrasoft X-Rayspectroscopy. Leningrad: Leningrad State UniversityPubl.; 1971. 132 p.14. Wiech G., Feldhütter H. O., Šimůnek A. Electronicstructure of amorphous SiOx:H alloy filmsstudied by X-ray emission spectroscopy: Si K, Si L, andO K emission bands. Physical Review B. 1993;47(12):6981–6989. DOI: https://doi.org/10.1103/Phys-RevB.47.698115. Domashevskaya E. P., Peshkov Y. A., TerekhovV. A., Yurakov Y. A., Barkov K. A., Phase compositionof the buried silicon interlayers in the amorph o u s m u l t i l a y e r n a n o s t r u c t u r e s[(Co45Fe45Zr10)/a-Si:H]41 and [(Co45Fe45Zr10)35(Al2O3)65/a-Si:H]41. Surface and Interface Analysis.2018;50(12-13): 1265–1270. DOI: https://doi.org/10.1002/sia.651516. Terekhov V. A., Kashkarov V. M., ManukovskiiE. Yu., Schukarev A. V., Domashevskaya E. P.Determination of the phase composition of surfacelayers of porous silicon by ultrasoft X-ray spectroscopyand X-ray photoelectron spectroscopy techniques.Journal of Electron Spectroscopy and Related Phenomena.2001;114–116: 895–900. DOI: https://doi.org/10.1016/S0368-2048(00)00393-517. JCPDS-International Centre for DiffractionData ICDD PDF-2, (n.d.) card No 01-077-2110.18. JCPDS-International Centre for DiffractionData ICDD PDF-2, (n.d.) card No 00-050-0438.

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Rearrangement of the optical properties of a-SiOx: H films after crystallization of silicon nanoclusters

Терехов

Теруков

Undalov

et al. 2021

Journal of Non-Crystalline Solids

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Formation of ncl-Si in the Amorphous Matrix a-SiOx:H Located near the Anode and on the Cathode, Using a Time-Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase ($${{{\text{C}}}_{{{{{\text{O}}}_{2}}}}}$$ = 21.5 mol %)

Cited by 3 publications

References 11 publications

Effect of Plasma Oxygen Content on the Size and Content of Silicon Nanoclusters in Amorphous SiOx Films Obtained with Plasma-Enhanced Chemical Vapor Deposition

Effect of Plasma Oxygen Content on the Size and Content of Silicon Nanoclusters in Amorphous SiOx Films Obtained with Plasma-Enhanced Chemical Vapor Deposition

Structural Rearrangement of a-SiOx:H Films with Pulse Photon Annealing

Rearrangement of the optical properties of a-SiOx: H films after crystallization of silicon nanoclusters

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