Effect of annealing in oxidizing atmosphere on optical and structural properties of silicon suboxide thin films obtained by gas-jet electron beam plasma chemical vapor deposition method

Zamchiy, A. O.; Баранов, Е. А.; Merkulova, I. E.; Володин, В. А.; Шарафутдинов, М. Р.; Khmel, S. Ya.

doi:10.1016/j.vacuum.2018.03.055

Cited by 15 publications

(12 citation statements)

References 46 publications

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“…The XRD pattern of the sample annealed for 30 h (Fig. 2 (b)) demonstrates a narrow peak centered on 2θ = 28.4° (θ is the angle of incidence-reflection), which corresponds to crystalline silicon with the (111) plane [11]. Peaks corresponding to other orientations were not observed in the pattern.…”

Section: Resultsmentioning

confidence: 98%

Effect of annealing time on aluminum-induced crystallization of silicon suboxide thin films

et al. 2019

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Polycrystalline silicon (poly-Si) thin films were obtained by aluminium induced crystallisation of amorphous silicon suboxide (a-SiOx, x = 0.22) via annealing of a-SiO0.22/Al bilayer structures at 550 °C for 4 - 30 h. The a-SiO0.22/Al thickness ratio was approximately 1. According optical microscopy measurements, the crystallized fraction reached the saturation value of 85% after annealing for 20 h. The further increase in the annealing time didn’t lead to an increase in this value. X-ray diffraction measurements revealed that the formed poly-Si had a strong Si (111) preferred orientation.

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Section: Resultsmentioning

confidence: 98%

Effect of annealing time on aluminum-induced crystallization of silicon suboxide thin films

et al. 2019

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“…Post-annealing at 1000°C for 12 hours resulted in crystallization of amorphous silicon clusters in the silicon suboxide matrix [14]. As a result of annealing, crystallites of nanometer size were formed.…”

Section: Resultsmentioning

confidence: 99%

The changing of silicon suboxide film thickness as a result of high temperature annealing

Zamchiy

Баранов

2019

EPJ Web Conf.

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The a-SiO x :H thin films were deposited by the gas-jet electron beam plasma chemical vapor deposition method with different stoichiometry (x=0.15-1.0) for different SiH 4 flow rates. The concentration of hydrogen in the films increases with the growth rate in ranges from 1.5 to 4.8 at.%. Further annealing leads to the effusion of hydrogen from the structure of the material and the compression of the structure, which leads to a reduction in the thickness for all films. X-ray diffraction measurements showed that the as-deposited films crystallized to form nc-Si about 4-8 nm in size after annealing at 1000°C.

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“…El hecho de que Leigh Canham en 1990 [1] haya descubierto emisión visible en silicio poroso aún con algunos inconvenientes como degradación y escasa estabilidad [2], motivó a muchos investigadores para obtener materiales basados en silicio como el óxido de silicio fuera de estequiometría, también conocido como óxido de silicio rico en silicio (SRO), el cual es compatible con la tecnología CMOS existente [3][4][5]. Este material en sus caracterizaciones ópticas y estructurales ha mostrado excelente respuesta fotoluminiscente a temperatura ambiente.…”

Section: Introductionunclassified

Comparaciones ópticas y estructurales de las películas de Óxido de Silicio rico en Silicio (SRO) depositadas por las técnicas LPCVD y HFCVD

Hernández

Luna-López

Luna-Flores

et al. 2019

JOES

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In this work, we conducted a comparative study of the optical and structural properties of Silicon Rich Oxide (SRO) films deposited by two chemical vapor deposition techniques: at Low Pressure (LPCVD) and activated by Hot Filament (HFCVD). SRO-LPCVD films were deposited at a silane and nitrous oxide pressures (R_0=P_(N_2 O)/P_(〖SiH〗_4 )) rate of R0=10 y R0=25. SRO-HFCVD films were deposited at a hydrogen pressure of 25 and 100 sccm, at a distance between source and substrate of 8 mm. To improve the optical properties, we have subjected the films obtained by both techniques to thermal treatments at high temperatures. The optical and structural characterizations that we used for comparison of the films were: Null Spectroscopy, Fourier Transform Infrared Spectroscopy (FTIR) and Photoluminescence (FL), Scanning Electron Microscopy (SEM) and High-Resolution Transmission Electron Microscopy (HRTEM). The SEM microscopy corroborates the thicknesses of the SRO films obtained by Null Spectroscopy, likewise, the HRTEM microscopy corroborates the diameter size of the silicon nanocrystals (ncs-Si), which also were calculated theoretically with the band gap energy (Eg) obtained in the FL spectra. These characterizations show that either of the two techniques are excellent alternatives for obtaining SRO films with photoluminescent emission, which can be used for photodetector and electroluminescent devices.

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Effect of annealing in oxidizing atmosphere on optical and structural properties of silicon suboxide thin films obtained by gas-jet electron beam plasma chemical vapor deposition method

Cited by 15 publications

References 46 publications

Effect of annealing time on aluminum-induced crystallization of silicon suboxide thin films

Effect of annealing time on aluminum-induced crystallization of silicon suboxide thin films

The changing of silicon suboxide film thickness as a result of high temperature annealing

Comparaciones ópticas y estructurales de las películas de Óxido de Silicio rico en Silicio (SRO) depositadas por las técnicas LPCVD y HFCVD

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