On the destruction limit of Si power diodes during reverse recovery with dynamic avalanche

Domeij, Martin; Lutz, Josef; Silber, D.

doi:10.1109/ted.2002.808423

Cited by 73 publications

(30 citation statements)

References 11 publications

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“…This system uses characteristics of both forward I-V and reverse C-V with small biasing conditions. However, it has been proved that the said conditions are not enough in physical phenomena like high-level injection [14], dynamic avalanche [19,20] and Kirk effect [21].…”

Section: Extraction Procedure: State-of-art and Algorithmmentioning

confidence: 99%

A novel approach to extract accurate design parameters of PiN diode

Salah¹,

Ghedira²,

Garrab³

et al. 2007

Int J Numerical Modelling

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SUMMARYAccurate modelling of PiN diode transient behaviour is necessary to extract design parameters which are not documented in datasheets. To meet this requirement, this paper introduces a novel approach giving the possibility to identify accurate parameters of a given device. The used technique is based only on two stages. First, the design parameters are initialized and optimized. Second, they are refined by minimizing the cost function which depends on the transient switching parameters (I RM , V RM and t rr ).With a simple and CPU time-saving approach this technique leads to extract design parameters without necessarily knowing the exact technological architecture of the PiN diode. Moreover, in order to validate the proposed approach and the parameter extraction procedure three commercial diodes are tested. A good agreement between experimental and simulation data is obtained.

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Section: Extraction Procedure: State-of-art and Algorithmmentioning

confidence: 99%

A novel approach to extract accurate design parameters of PiN diode

Salah¹,

Ghedira²,

Garrab³

et al. 2007

Int J Numerical Modelling

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show abstract

“…In this test, both diodes failed, but apparently for different reasons. The SPT + diode failed due to an over-voltage peak and a subsequent electric field distortion due to the low plasma concentration on the cathode side of the Nbase [11]. In this failure mode, the destruction point is always located in the central part of the active diode area, whereas the SPT diodes always fail at the edge of the main active area junction.…”

Section: Reverse Recovery Ruggednessmentioning

confidence: 99%

New plasma shaping technology for optimal high voltage diode performance

Kopta

Rahimo

Schlapbach

2007

2007 European Conference on Power Electronics and Applications

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In this paper, a newly developed diode technology platform for 3.3 kV, 4.5 kV and 6.5 kV diodes for next generation high power IGBT modules will be presented. The new diode range offers low losses and soft recovery characteristics combined with a high reverse recovery safe operating area and superior surge current capability. The new diode technology employs a double local lifetime-control method using He ++ irradiation to control the on-state electron-hole distribution on both the anode and cathode sides of the diode.

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“…3, b) на осциллограммах эмиттерного и полного токов, при дальнейшем незначительном повышении выключаемого тока прибор разрушается. Такой колебательный процесс неоднократно наблюдался ранее [3,4] и др. при про-хождении потока свободных носителей из плазмы че-рез ООЗ обратносмещенного pn-перехода как в диодных, так и более сложных структурах, например в IGBT.…”

Section: Introductionunclassified

Исследование Процесса Выключения Интегрального Тиристора С Внешним Полевым Управлением

Грехов¹,

Люблинский²,

Скиданов³

2017

Журнал Технической Физики

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Представлены результаты экспериментального исследования процесса выключения интегрального тири-стора в схеме с индуктивной нагрузкой. Показано, что предельная плотность выключаемого тока определяет-ся возникновением высокочастотного колебательного процесса в условиях динамического лавинного пробоя, приводящего к образованию нестабильных шнуров тока. Этот процесс возникает в самом начале нарастания напряжения на коллекторном переходе и инициируется потоком электронов из эмиттера в область объемного заряда коллектора. Обсуждены возможные пути повышения предельной плотности выключаемого тока.

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On the destruction limit of Si power diodes during reverse recovery with dynamic avalanche

Cited by 73 publications

References 11 publications

A novel approach to extract accurate design parameters of PiN diode

A novel approach to extract accurate design parameters of PiN diode

New plasma shaping technology for optimal high voltage diode performance

Исследование Процесса Выключения Интегрального Тиристора С Внешним Полевым Управлением

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