Epitaxial Ti3SiC2 (0001) thin film contacts were grown on doped 4H-SiC (0001) using magnetron sputtering in an ultra high vacuum system. The specific contact resistance was investigated using linear transmission line measurements. Rapid thermal annealing at 950 °C for 1 min of as-deposited films yielded ohmic contacts to n-type SiC with contact resistances in the order of 10−4 Ω cm2. Transmission electron microscopy shows that the interface between Ti3SiC2 and n-type SiC is atomically sharp with evidence of interfacial ordering after annealing.

No abstract

No abstract

No abstract

No abstract