Ohmic contact properties of magnetron sputtered Ti3SiC2 on n- and p-type 4H-silicon carbide

Abstract

Epitaxial Ti3SiC2 (0001) thin film contacts were grown on doped 4H-SiC (0001) using magnetron sputtering in an ultra high vacuum system. The specific contact resistance was investigated using linear transmission line measurements. Rapid thermal annealing at 950 °C for 1 min of as-deposited films yielded ohmic contacts to n-type SiC with contact resistances in the order of 10−4 Ω cm2. Transmission electron microscopy shows that the interface between Ti3SiC2 and n-type SiC is atomically sharp with evidence of interfacial ordering after annealing.

Magnetic MAX phases from theory and experiments; a review

“…Since 2002 [97] MAX phases have been increasingly synthesized as thin film materials for potential applications such as oxidation-resistant and protective coatings on, e.g., turbine blades [99], bond coatings on sapphire fibers [100], and low friction and oxidation-resistant contacts [101]. In the latter examples the focus is primarily on achieving single-phase films of high density, where steps towards making high quality single crystal samples have mostly been taken since 2010.…”

Epitaxial growth and electrical transport properties of Cr2GeC thin films

“…for Ti 3 SiC 2 contacts to SiC. [20][21][22] As thin films, the close relatives of Cr 2 GeC, Ti 2 GeC, [23][24][25][26] V 2 GeC, 27,28 and Cr 2 AlC [29][30][31][32][33][34] have all been investigated. From a potential technological viewpoint, the latter two are particularly interesting since they can be grown at a relatively low substrate temperature (450 • C), 27,29 which is essential for deposition onto technologically relevant substrates, such as steels.…”

Single-step synthesis process of Ti 3 SiC 2 ohmic contacts on 4H-SiC by sputter-deposition of Ti

“…19 However, 15 growth of this phase on 4H-SiC was reported to still require high temperature rapid thermal annealing 16 to exhibit Ohmic properties. 20 Transmission electron microscopy studies before and after the annealing 17 process of Ti 3 SiC 2 films showed that annealing resulted in a more ordered interface between the film 18 and 4H-SiC. 20 19 Eliminating the annealing process-step, i.e., synthesizing as-deposited Ohmic contacts through a single-20 step process would be beneficial for the Ohmic contacts to SiC-based devices.…”

“…20 Transmission electron microscopy studies before and after the annealing 17 process of Ti 3 SiC 2 films showed that annealing resulted in a more ordered interface between the film 18 and 4H-SiC. 20 19 Eliminating the annealing process-step, i.e., synthesizing as-deposited Ohmic contacts through a single-20 step process would be beneficial for the Ohmic contacts to SiC-based devices. 21 In addition, this 21 approach puts forward the possibility to directly synthesize oxygen-barrier capping layers after the 22 main contact deposition without exposing the devices to air for a process-step like annealing, avoiding 23 any risk of oxidation or contamination or any need for a cleaning-step.…”