On the applicability of self-consistent global model for the characterization of Cl2/Ar inductively coupled plasma

Efremov, Alexander; Kim, Gwan-Ha; Kim, Jong-Gyu; Bogomolov, A. V.; Kim, Chang-Il

doi:10.1016/j.mee.2006.09.020

Cited by 53 publications

(75 citation statements)

References 33 publications

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“…Accordingly, a decrease in the relative density of negative ions n -/n e in the range of 1.28-0.63 takes place. The values of n -/n e obtained in this work are in good agreement with earlier published data for low-pressure electronegative plasmas [8,[34][35][36]. Figure 3 represents the influence of gas mixing ratio on the steady-state densities of neutral species in the HBr/Ar and HBr/Cl 2 plasmas.…”

Section: Plasma Parameters and Compositionsupporting

confidence: 90%

“…That is why the dilution of HBr by Ar lowers the electron energy loss in the medium part of the EEDF (e col % P i P j y i k i;j e th i;j ¼ 1:65 Â 10 À8 À 1:40 Â 10 À8 eVcm 3 =s, where y is the mole fraction for the i-type plasma component while k and eth are the rate coefficient and the threshold energy for the j-type inelastic process) and shifts T e toward higher values. Similar results have been repeatedly reported for the Cl 2 /Ar plasmas [34,35]. In the HBr/Cl 2 plasma, the same effect is due to the high dissociation degree of Cl 2 molecules that provides n Cl =n Cl 2 [ 3 and e col = 1.65 9 10 -8 -1.57 9 10 -8 eVcm 3 s -1 because the EEDF is noticeably influenced by the Cl-e collisions.…”

Section: Plasma Parameters and Compositionsupporting

confidence: 87%

“…R45 given modeling algorithm with the given kinetic schemes is confirmed by an acceptable agreement between measured and calculated plasma parameters in pure HBr [10], pure Cl 2 [17], pure Ar [18] and Cl 2 /Ar [34] ICPs.…”

Section: R44mentioning

confidence: 68%

See 2 more Smart Citations

A Comparative Study of HBr-Ar and HBr-Cl2 Plasma Chemistries for Dry Etch Applications

Efremov

Kim

Lee

et al. 2010

Plasma Chem Plasma Process

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The effects of HBr/Ar and HBr/Cl 2 mixing ratios in the ranges of 0-100% Ar or Cl 2 on plasma parameters, densities of active species influencing the dry etch mechanisms were analyzed at fixed total gas flow rate of 40 sccm, total gas pressure of 6 mTorr, input power of 700 W and bias power of 300 W. The investigation combined plasma diagnostics by Langmuir probes and the 0-dimensional plasma modeling. It was found that the dilution of HBr by Ar results in maximum effect on the ion energy flux with expected impact on the etch rate in the ion-flux-limited etch regime, while the addition of Cl 2 influences mainly the relative fluxes of Br and Cl atoms on the etched surface with expected impact on the etch rate in the reaction-rate-limited etch regime.

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Section: Plasma Parameters and Compositionsupporting

confidence: 90%

Section: Plasma Parameters and Compositionsupporting

confidence: 87%

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A Comparative Study of HBr-Ar and HBr-Cl2 Plasma Chemistries for Dry Etch Applications

Efremov

Kim

Lee

et al. 2010

Plasma Chem Plasma Process

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“…These peaks were shifted toward a low binding energy and the maximum deviation was about Δ 0.3 eV when the TiO 2 thin films were exposed in Cl 2 /Ar plasma. This chemical shift indicates that Ti chemically reacted with Cl radical at the surface [13][14][15]. The intensity of this peak increases slightly with the Cl 2 /Ar (75%:25%) plasma, as shown in Fig 3(b), this changes of intensity can be related to the signal from the Ti-O x bond, which was deconvoluted as shown in Fig.…”

Section: Resultsmentioning

confidence: 83%

Surface Etching of TiO₂Thin Films Using High Density Cl₂/Ar Plasma

Woo¹,

Joo²,

Kim³

2015

Transactions on Electrical and Electronic Materials

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In this study, we carried out an investigation of the etch characteristics of TiO 2 thin films and the selectivity of TiO 2 to SiO 2 in adaptive coupled C1 2 /Ar plasma. The maximum etch rate of the TiO 2 thin film was 136±5 nm/min at a gas mixing ratio of C1 2 /Ar (75%:25%). The X-ray photoelectron spectroscopy (XPS) analysis showed the efficient destruction of oxide bonds by the ion bombardment as well as the accumulation of low volatile reaction products on the etched surface.

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“…Experimental studies concerning the chloride plasma discharges have been carried out to investigate the electrical and kinetic properties of mentioned plasma discharges [17][18][19][20][21][22][23]. Modelling of plasma discharge in different degrees of complexity, specially, for the chloride precursors have been developed by using different approaches [9,[24][25][26][27][28]] such as fluid model, Particle In Cell or global model to model the electro-magnetic phenomena transport of charged species in different types of reactors.…”

Section: Introductionmentioning

confidence: 99%

Atomic scale study of InP etching by Cl₂-Ar ICP plasma discharge

Rhallabi

Chanson

Landesman

et al. 2011

Eur. Phys. J. Appl. Phys.

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A gas phase kinetic model combined to a 3D atomic etching model have been developed to study the etching process of InP under Cl 2 -Ar ICP plasma discharge. A gas phase global kinetic model is used to calculate the reactive particle fluxes implied in the etching mechanisms. The 3D atomic InP etching model is based on the Monte-Carlo kinetic approach where the plasma surface interactions are described in the probability way. The coupling between the plasma chemistry model and the surface etching model is an interesting approach to predict the etched surface properties in term of the etch rate, the surface roughness and surface steochiometry as a function of the operating conditions.A satisfactory agreement is obtained by comparing the experimental and the simulation results concerning the evolution of the main plasma discharge parameters such as the electron density and temperature versus the ICP source power for surface recombination coefficient of atomic chlorine fixed at γ Cl =0.04. On the other hand, simulation results show the effect of the operating conditions on the etched surface roughness and the etch rate evolutions with time in the early stage. Moreover, the simulation results show the correlation between the decrease of the ion to chlorine flux ratio and the decrease of the RRMS as a function of the pressure.

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On the applicability of self-consistent global model for the characterization of Cl2/Ar inductively coupled plasma

Cited by 53 publications

References 33 publications

A Comparative Study of HBr-Ar and HBr-Cl2 Plasma Chemistries for Dry Etch Applications

A Comparative Study of HBr-Ar and HBr-Cl2 Plasma Chemistries for Dry Etch Applications

Surface Etching of TiO₂Thin Films Using High Density Cl₂/Ar Plasma

Atomic scale study of InP etching by Cl₂-Ar ICP plasma discharge

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On the applicability of self-consistent global model for the characterization of Cl2/Ar inductively coupled plasma

Cited by 53 publications

References 33 publications

A Comparative Study of HBr-Ar and HBr-Cl2 Plasma Chemistries for Dry Etch Applications

A Comparative Study of HBr-Ar and HBr-Cl2 Plasma Chemistries for Dry Etch Applications

Surface Etching of TiO2Thin Films Using High Density Cl2/Ar Plasma

Atomic scale study of InP etching by Cl2-Ar ICP plasma discharge

Contact Info

Product

Resources

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Surface Etching of TiO₂Thin Films Using High Density Cl₂/Ar Plasma

Atomic scale study of InP etching by Cl₂-Ar ICP plasma discharge