Surface Etching of TiO₂Thin Films Using High Density Cl₂/Ar Plasma

Abstract

In this study, we carried out an investigation of the etch characteristics of TiO 2 thin films and the selectivity of TiO 2 to SiO 2 in adaptive coupled C1 2 /Ar plasma. The maximum etch rate of the TiO 2 thin film was 136±5 nm/min at a gas mixing ratio of C1 2 /Ar (75%:25%). The X-ray photoelectron spectroscopy (XPS) analysis showed the efficient destruction of oxide bonds by the ion bombardment as well as the accumulation of low volatile reaction products on the etched surface.