On the analysis of EBIC contrast of crystal defects

Beer, Meinrad; Menniger, H.; Raidt, H.; Rohrbeck, W.

doi:10.1002/pssa.2210610206

Cited by 3 publications

(3 citation statements)

References 10 publications

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“…Recently Beer et al [7] proposed a different approach in order to describe the geometry of the contrast of inclined straight dislocations. The basic assumption was that the contrast a t a given point of the image is a function of the distance between the centre of the generation and the dislocation line; by this hypothesis a good fit to the observed shape of the contours of equal EBIC signal could be achieved 171.…”

Section: Discussionmentioning

confidence: 99%

“…The simulations turned out to be in fairly good agreement with experimental images, although they failed to reproduce some observed features. The results of [5] as well as the geometrical comparisons by Beer et al [7] suggested that a reason for the limited fidelity obtained was the use of the uniform generation sphere approximation [8] for describing the ionizat,ion produced by the electron beam in the semiconductor . I) Via Cast,agnoli 1, 40126 Bologna, Italy.…”

Section: Introductionmentioning

confidence: 99%

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Influence of the Generation Distribution on the Calculated EBIC Contrast of Line Defects

Donolato¹,

Venturi²

1982

phys. stat. sol. (a)

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Images of representative line defects in silicon, as obtained by the electron beam induced current (EBIC) mode of the scanning electron microscope, are computer simulated using two generation schemes : the uniform generation sphere and a modified Gaussian distribution. The simulations are based on an analytical model of EBIC contrast a t defects, which makes use of the solution of the minority-carrier diffusion problem in the defect-free semiconductor. A comparison between calculated and experimental images indicates that the Gaussian approximation gives a better description of the observed contrast. Residual differences between theory and experiment are attributed to depletion layer effects. Abbildungen typischer Liniendefekte in Silizium, die durch Anwendung der EBIC-Methode des Raster-Elektronenmikroskops erhalten werden. werden Computer-simuliert unter Verwendung zweier Erzeugungsnahemngen: eine Kugel gleichmiidiger Generation und eine modifizierte GauBsche Verteilung. Die Simulationen gehen von einem analytischen Model1 des EBIC-Kontrasts a n Defekten aus, wobei die Losung des Diffusionsproblems fur Minoritatsladungstriiger im defektfreien Halbleiter verwendet wird. Der Vergleich berechneter und experimenteller Abbildungen weist darauf hin, daB die GauBsche Niiherung eine bessere Beschreibung des beobachteten Kontrasts ergibt. Restunterschiede zwischen Theorie und Experiment werden auf Effekte in der Verarmungszone zuruckgefuhrt. * n po(r, Z ; R) = -dk J,(kr) dz'[e-klZ-Z'I -e'p(z+t')] Jo(kr') g(r', 2') r' dr'. J J 0 0 n

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Influence of the Generation Distribution on the Calculated EBIC Contrast of Line Defects

Donolato¹,

Venturi²

1982

phys. stat. sol. (a)

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“…EBIC contrast behavior of various types of extended defects, including grain boundaries, stacking faults, and dislocations, have been studied extensively [1][2][3][4][5][6][7]. Particular attention has been given to the temperature dependence of the EBIC contrast, as plots of contrast at dislocations (C d ) vs. temperature reveal information about extended defect character and impurity decoration [8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

A model for electron-beam-induced current analysis of mc-Si addressing defect contrast behavior in heavily contaminated PV material

Guthrey

Gorman

Coletti

et al. 2012

2012 38th IEEE Photovoltaic Specialists Conference

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Much work has been done to correlate electronbeam-induced current (EBIC) contrast behavior of extended defects with the character and degree of impurity decoration. However, existing models fail to account for recently observed contrast behavior of defects in heavily contaminated mc-Si PV cells. We have observed large increases in defect contrast with decreasing temperature for all electrically active defects, regardless of their initial contrast signatures at ambient temperature. This negates the usefulness of the existing models in identifying defect character and levels of impurity decoration based on the temperature dependence of the contrast behavior. By considering the interactions of transition metal impurities with the silicon lattice and extended defects, we attempt to provide an explanation for these observations. Our findings will enhance the ability of the PV community to understand and mitigate the effects of these types of defects as the adoption of increasingly lower purity feedstocks for mc-Si PV production continues. Index Terms-mc-Si, silicon defects, electron beam induced current, EBIC contrast, iron contamination.

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On the sensitivity of the EBIC technique as applied to defect investigations in silicon

Kittler¹,

Seifert²

1981

Phys. Stat. Sol. (a)

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Estimations of the sensitivity of the steady‐state EBIC method to the detection of recombination centres are made for the cases of point‐like and line‐shaped defects. The estimations are compared to both the authors's experimental findings and results from the literature and come out to be in good correspondence with them: In usual EBIC circuitry, only dislocations having impurity atmospheres with some content of deep centres are detectable. Investigation of recombination centres related to „clean”︁ dislocations, on the other hand, requires a more sensitive detection circuitry (e.g. lock‐in technique). The given formulaes may also be used for semi‐quantitative analysis of the EBIC contrast.

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On the analysis of EBIC contrast of crystal defects

Cited by 3 publications

References 10 publications

Influence of the Generation Distribution on the Calculated EBIC Contrast of Line Defects

Influence of the Generation Distribution on the Calculated EBIC Contrast of Line Defects

A model for electron-beam-induced current analysis of mc-Si addressing defect contrast behavior in heavily contaminated PV material

On the sensitivity of the EBIC technique as applied to defect investigations in silicon

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