On the sensitivity of the EBIC technique as applied to defect investigations in silicon

Abstract

Estimations of the sensitivity of the steady‐state EBIC method to the detection of recombination centres are made for the cases of point‐like and line‐shaped defects. The estimations are compared to both the authors's experimental findings and results from the literature and come out to be in good correspondence with them: In usual EBIC circuitry, only dislocations having impurity atmospheres with some content of deep centres are detectable. Investigation of recombination centres related to „clean”︁ dislocations, on the other hand, requires a more sensitive detection circuitry (e.g. lock‐in technique). The given formulaes may also be used for semi‐quantitative analysis of the EBIC contrast.

About the D1 and D2 Dislocation Luminescence and Its Correlation with Oxygen Segregation

“…According to the model of Kittler and Seifert [22,23], and Wilshaw et al [24] the features of the temperature dependence of the recombination at dislocation are largely depending on the trap level position with respect to the Fermi level, an increasing recombination with temperature coming from charged dislocations and deep dislocation centres. In our case, the increase of the non-radiative recombination activity at increasing temperatures (from the temperature quenching of the luminescence) calls for the presence of a deep non-radiative recombination centre, possibly correlated with the C centre at E v + 0.35 eV observed besides others by Cavalcoli et al [25] with DLTS experiments.…”

EBIC Microscopy Applied to Glide Dislocations)

“…undecorated dislocation a first decision is to be made choosing the capture cross section o d . Kittler and Seifert [16] think of single dangling bonds in the core of the dislocation as recombination centers (nd = 10-16cm2) and come to the conclusion that such a clean dislocation should not produce a detectable contrast. This conclusion may apply in fact to uncharged dislocations.…”

Extension of Hydrogen Passivation of Intragrain Defects and Grain Boundaries in Cast Multicrystalline Silicon

“…Although this relation was derived for weak dislocations, it is valid for most practical cases except very high dislocation activity. In principle, experimental values for G at a given temperature can be obtained from the corresponding c value since the factor F is easily calculated [16]. 1a).…”