Influence of the Generation Distribution on the Calculated EBIC Contrast of Line Defects

Abstract

Images of representative line defects in silicon, as obtained by the electron beam induced current (EBIC) mode of the scanning electron microscope, are computer simulated using two generation schemes : the uniform generation sphere and a modified Gaussian distribution. The simulations are based on an analytical model of EBIC contrast a t defects, which makes use of the solution of the minority-carrier diffusion problem in the defect-free semiconductor. A comparison between calculated and experimental images indicates that the Gaussian approximation gives a better description of the observed contrast. Residual differences between theory and experiment are attributed to depletion layer effects. Abbildungen typischer Liniendefekte in Silizium, die durch Anwendung der EBIC-Methode des Raster-Elektronenmikroskops erhalten werden. werden Computer-simuliert unter Verwendung zweier Erzeugungsnahemngen: eine Kugel gleichmiidiger Generation und eine modifizierte GauBsche Verteilung. Die Simulationen gehen von einem analytischen Model1 des EBIC-Kontrasts a n Defekten aus, wobei die Losung des Diffusionsproblems fur Minoritatsladungstriiger im defektfreien Halbleiter verwendet wird. Der Vergleich berechneter und experimenteller Abbildungen weist darauf hin, daB die GauBsche Niiherung eine bessere Beschreibung des beobachteten Kontrasts ergibt. Restunterschiede zwischen Theorie und Experiment werden auf Effekte in der Verarmungszone zuruckgefuhrt. * n po(r, Z ; R) = -dk J,(kr) dz'[e-klZ-Z'I -e'p(z+t')] Jo(kr') g(r', 2') r' dr'. J J 0 0 n

Kilovolt electron energy loss distribution in Si

“…In order to submit a result simply evaluable, the spatial dose distribution is to be included not only by results from measurements and Monte Carlo calculations but also by an analytic description. Unlike Wittry (1958) and Fitting et a1 (1977) who confine their analytic description of the generation volume to the diffusion part, and unlike Donolato (1981) and Donolato and Venturi (1982) who express it approximately by the penetration part only, this paper considers both parts.…”

EBIC Investigastion of the Electrical Activity of Dislocations with Different Impurity Atmospheres in Si

“…where Zo < 1 8. pm, y ( Z )e -(Z -W) /Lp If we assume that part of the dislocation situated inside the depletion region does not contribute to the contrast or this contribution does not practically depend on W the part of the contrast associated with the dislocation section situated between W and Zo is and Then…”

Visualization of microscopic stress fields in silica glass in the scanning electron microscope

“…When the CL characterization is aimed at the determination of distribution profiles with a strong three-dimensional character (i.e., with non-negligible components along the in-depth zdirection), a different type of PRF, as given by Donolato,11) should be used. The differential contribution of each portion of volume of the luminescent probe (i.e., the PRF) was then obtained from calculating the first derivative of the normalized CL intensity.…”