The properties of regions swept by a moving dislocation in silicon crystals are experimentally studied. The peculiarities of forming traces of various types behind dislocations observed by electron microscopy and chemical etching are investigated. These traces are found to arise as result of point defect redistribution by moving dislocations and change in their structural state in a volume swept by a dislocation. It is shown that the processes mentioned enable the slip plane to assume properties of a specific two‐dimensional defect responsible for the appearance of the new mechanism of a charge carrier mobility anisotropy in the plastically deformed crystals.
The recombination efficiency of separate dislocations and crystal areas swept by them is studied by the electron beam induced current (EBIC) method in plastically deformed silicon. It is found that the EBIC‐contrast of slip planes may exceed the contrast of dislocations themselves. Slip plane contrast is observed to depend on beam current. The data obtained may be explained on the assumption that there is an electrostatic barrier closeto the quasi‐two‐dimensional defect, i.e. the dislocation slip plane.
It is shown that the starting stresses for dislocation glide and their electrical activity are determined by the temperature, dislocation velocity, and distance moved upon bringing them to the starting position and, also, on the sample cooling rate after deformation. A correlation between starting stresses and dislocation donor center concentration is observed. It is shown that the result obtained is determined by the formation of complicated centers in the impurity atmospheres of both, mobile and immobile dislocations. nOKa3aH0, YTO CTapTOBbIe HaIIpH)XeHHH HJIH ABIIMeHIIH HHAMBUnYanbHbIX AMaOKaqHfi U MX 3JIeKTpUYeCKaH aKTHBHOCTb OIIpeAeJIHIoTCH TeMnepaTmOfi KPHCTaJIJIa, CKOPOCTbIo W AJIHHOfi IIpOtiAeHHOrO AMCJIOKaIlHfiMU IIyTII npH BbIBeHeHHU IIX B CTapTOBOe IIOJIO-06aapymeaa KOppeJIH~HH Me?KAy 3HaYeHHRMH CTaPTOBbIX HaIIpHmeHUfi II KOHIleHTpa-OIIpeHenRIoTCH 06pa30BaHMeM CJIOXHblX UeHTPOB B IIPUMeCHbIX aTMOC@epaX KaK HBM-meaue, a Tmme C K O~O C T~~I O oxnamneam o6pawa nocne nnacTmecKot ne@opMauHu. unet AucnoKamomibrx ~O H O P H W X UempoB. n o~a 3 a~0 , m o nonysemme p e 3 y n f i~a~~ ~( y~l z u x c~, TaK u HenonsumHMx nHcnoxaqafi.
Megaelectron volt (MeV) self‐implantation has been investigated as a means of producing buried defect layers for gettering metallic impurities in Czochralski (CZ) and float‐zone (FZ) silicon. The properties of implanted and annealed wafers were studied by generation lifetime (Zerbst) analysis of transient capacitance data, capacitance‐voltage measurements, deep‐level transient spectroscopy, scanning electron‐beam‐induced current microscopy, transmission electron microscopy, optical microscopy with preferential chemical etching, and secondary ion mass spectroscopy. We found that metallic contaminants such as Fe and Cu were effectively gettered to buried extended defect layers formed by implantation of ion fluences
≲1×1015 Si cm−2
. For example, the concentration of iron in regions near the buried defects can be reduced to below
1010 cm−3
in samples annealed at 900°C. The region above the damage layer appears to be free of electrically active defects, having very high generation lifetime values, and is therefore suitable for device processing. However, the structure and width of the buried defect band is sensitive to the implanted ion fluence and the oxygen content of the wafers. For example, the defect layers formed by high ion fluences
false(∼1015 cm−2false)
are wider in FZ wafers than in CZ wafers. For fluences
≈1×1014 cm2
, dislocations extend from the buried damage band in both directions during annealing and are observed at depths up to 10 μm. These dislocations intersect the wafer surface in both CZ and FZ wafers, making fluences lower than
≃5×1014 cm−2
unsuitable for device fabrication.
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