On one peculiarity of the model describing the interaction of the electron beam with the semiconductor surface

Abstract

Abstract. The problem of heat distribution in semiconductor materials irradiated with sharply focused electron beams in the absence of heat exchange between the target and the external medium is considered by mathematical modeling methods. For a quantitative description of energy losses by probe electrons a model based on a separate description of the contributions of absorbed in the target and backscattered electrons and applicable to a wide class of solids and a range of primary electron energies is used. Using the features of this approach, the nonmonotonic dependence of the temperature of the maximum heating in the target on the energy of the primary electrons is explained. Some modeling results are illustrated for semiconductor materials of electronic engineering.

Low frequency hybrid instability in semi-relativistic GaAs plasmas

“…Here we explore the potential application of low-frequency hybrid modes excited from the electron beam that is externally injected into the system as a free energy source. Several authors have described the production of electron beam and its potential application as a plasma generator [16][17][18][19][20]. Although the densities of plasma species in the semiconductor are low compared to the required quantum plasma densities in many metals, the reduced mass of electrons and holes due to periodic lattice potential of crystal validates the quantum condition…”

On the Joint Application of the Matrix Method and the Apparatus of Generalized Powers of Bers for Mathematical Modeling of Heat and Mass Transfer in Semiconductor Materials of Electronic Engineering

“…Отметим, что для однородных материалов проведено моделирование явлений тепломассопереноса и для остро сфокусированного электронного зонда [7]- [9], в т.ч. и с использованием численных методов [10], [11].…”

О Нахождении Моментных Функций Стохастического Процесса Теплопроводности С Использованием Проекционного Метода

“…Учет нагрева полупроводникового материала особенно существенен при использовании концентрированных источников воздействия, например, сфокусированных электронных пучков, широко используемых в электронно-зондовых технологиях (см. [3,22,23]).…”