The calculation method of distributions of minority charge carriers generated in the two-layer semiconductor by a wide electron beam with energies 5 -30 keY based on using the model ofindependent sources is described. ' L ThTRODUCTION For the quantitative description of diffusion of minority charge carriers (MCC) in the semiconductor the following two approaches can be used: 1) mode! ofeollective movement ofthe generated carriers in which on MCC diffusion from each microvolume of the semiconductor also with the carriers generated in other areas of a target are inflenced" . Mathematically it is expressed that as ftrnction of generation MCC the differential equation of diffi.ision includes the function describing of electron beam energy losses density in all volume of a target. Such model can be used for the quantitative description of processes in homogeneous semiconductors; 2) the model of independent sources. Primary it seems like a diffusive process of the carriers generated in each separate microvolume of the semiconductor, and resulting distribution of MCC is summation of the received distributions from each of mi3' . Mathematically it is expressed that the diffusion equation for each of dot sources ofMCC then by means of integration on the volume occupied MCC, there is their distribution in the semiconductor as a result of all over again is solved. This model can be applied for the quantitative description of processes in non-unWonn and multilayered stmctures and consequently is perspective at studying planar stmctures of semi-conductors.The purpose of the present work is studying opportunities of use of independent sources model for calculation ofdistributions MCC generated in the two-layer semiconductor by a wide electron beam.
STATEMENT OF PROBLEMThe structure such as "epitaxial film -substrate", created is considered on the basis of the same semiconductor material or at use of two various materials, but having close density, atomic numbers and atomic weights. In this case process of scattering of electron beam in structure can be described as for a homogeneous target then to consider diffi.ision generated MCC separately in the first material (film) and the second material (substrate). Really such model can be applied, for example, to structure "epitaxial film GaAs -inonocrystal substrate GaAs" with a different doping that provides various values of electrophysical parameters (the diffusion length L, the difihision coefficient D, the absorption coefficient a, etc.) in each of materials. For one-dimensional difihision in the semi-infinite semiconductor distribution superfluous MCC on depth z is given by expression : p(z)$Ap(z,zo)dzo.(1)
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