On-device lead sequestration for perovskite solar cells

Li, Xun; Wang, Shirong; He, Haiying; Berry, Joseph J.; Zhu, Kai; Xu, Tao

doi:10.1038/s41586-020-2001-x

Cited by 322 publications

(288 citation statements)

References 33 publications

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“…In a word, we conclude that the improved photovoltaic performances can be attributed both to the down-shifting effect and the anti-reflection property of CsPbBr 3 QDs by forming CsPbBr 3 QDs/mc-Si hybrid structures. Furthermore, for future photovoltaic application, in order to avoid the environmental pollution caused by lead, a protected layer will be introduced into the hybrid structures to reduce the lead leakage [44,45]. In order to evaluate the contributions from the down-shifting and anti-reflection effect, an enhancement factor (EF) is defined for both the EQE and absorption results:…”

Section: Photovoltaic Properties Of Cspbbr 3 Qds/mc-si Hybrid Structumentioning

confidence: 99%

Down-Shifting and Anti-Reflection Effect of CsPbBr3 Quantum Dots/Multicrystalline Silicon Hybrid Structures for Enhanced Photovoltaic Properties

Cao

Zhu

et al. 2020

Nanomaterials

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Over the past couple of decades, extensive research has been conducted on silicon (Si) based solar cells, whose power conversion efficiency (PCE) still has limitations because of a mismatched solar spectrum. Recently, a down-shifting effect has provided a new way to improve cell performances by converting ultraviolet (UV) photons to visible light. In this work, caesium lead bromide perovskite quantum dots (CsPbBr3 QDs) are synthesized with a uniform size of 10 nm. Exhibiting strong absorption of near UV light and intense photoluminescence (PL) peak at 515 nm, CsPbBr3 QDs show a potential application of the down-shifting effect. CsPbBr3 QDs/multicrystalline silicon (mc-Si) hybrid structured solar cells are fabricated and systematically studied. Compared with mc-Si solar cells, CsPbBr3 QDs/mc-Si solar cells have obvious improvement in external quantum efficiency (EQE) within the wavelength ranges of both 300 to 500 nm and 700 to 1100 nm, which can be attributed to the down-shifting effect and the anti-reflection property of CsPbBr3 QDs through the formation of CsPbBr3 QDs/mc-Si structures. Furthermore, a detailed discussion of contact resistance and interface defects is provided. As a result, the coated CsPbBr3 QDs are optimized to be two layers and the solar cell exhibits a highest PCE of 14.52%.

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Section: Photovoltaic Properties Of Cspbbr 3 Qds/mc-si Hybrid Structumentioning

confidence: 99%

Down-Shifting and Anti-Reflection Effect of CsPbBr3 Quantum Dots/Multicrystalline Silicon Hybrid Structures for Enhanced Photovoltaic Properties

Cao

Zhu

et al. 2020

Nanomaterials

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“…It is encouraging to mention that several encapsulation materials and strategies have already been developed for PSCs and modules that can significantly mitigate potential Pb leakage. [ 443,444 ] Jiang et al. ( Figure a,b) have quantitatively measured the Pb leakage rates from mechanically damaged perovskite solar modules and developed an epoxy resin based encapsulant that shows self‐healing characteristics under solar cell operational temperature (45 °C).…”

Section: Challenges For Commercialization Of Perovskite Tscsmentioning

confidence: 99%

“…As shown in Figure 35c,d, the PSC was sandwiched between two Pb absorbing transparent films. [ 443 ] On contact with water or in case of damage, the lead absorbing layer absorbs the lead residue while still retaining their structural integrity. As a result, they have claimed to capture 96% of the total amount of Pb that is leaked from the damaged PSCs (Figure 35e).…”

Section: Challenges For Commercialization Of Perovskite Tscsmentioning

confidence: 99%

Near‐Infrared‐Transparent Perovskite Solar Cells and Perovskite‐Based Tandem Photovoltaics

et al. 2020

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production have resulted in the reduction of production cost and has facilitated the growth of solar PV technology. [2-6] To make the PV technology more costcompetitive compared to other conventional sources of energy and to further fuel its rapid deployment, the levelized cost of electricity (LCOE) of a PV system needs to be reduced. In a PV system, apart from PV modules, other constituent components such as mounting unit, wiring, inverters, and battery storage constitute about 55% of the total cost. [7,8] These components are generally referred to as the balance of system (BOS). The BOS cost scales proportionally with the area of solar panel installation. An ideal way to reduce the LCOE is by increasing the efficiency of the PV modules. [8] The efficiency of well-established solar cell technologies (Figure 1) such as crystalline silicon (c-Si), gallium arsenide (GaAs) and copper indium gallium selenide (CIGS) are progressing toward the Shockley-Queisser (S-Q) limit, leaving limited room for further improvement in their performance. The thermalization and non-absorption losses incurred in these solar cells mainly restrict their spectral utilization and, consequently, their performance. However, the thermalization losses incurred in single-junction solar cells can be mitigated by combining a wide-bandgap cell with a lowbandgap cell in a multijunction solar cell design, which possesses the ability to achieve efficiencies that surpass the S-Q limit of single-junction solar cells. The practical implementation of multijunction solar cells (MJSCs) utilizing III-V materials have achieved great success in the past. [9] Under 1 sun illumination, LG Electronics and Sharp Corporation have demonstrated monolithic two-terminal MJSC devices using 2-junction (InGaP/GaAs) and 3-junction (InGaP/GaAs/InGaAs) absorber layers to attain power conversion efficiencies (PCEs) of 32.8% [10] and 37.8% [11] respectively. In 2013, Spectrolab utilized a direct bonding technique to grow a lattice-matched 5-junction monolithic MJSC device and demonstrated an efficiency of 38.8% under 1 sun illumination. [12] Very recently, NREL developed a 6-junction monolithic MJSC device to demonstrate a PCE of 39.2% under 1 sun illumination. [13] Despite achieving efficiencies beyond the S-Q limit of singlejunction solar cells, the deployment of III-V MJSCs is limited to space applications due to their high manufacturing cost coupled with slow and complicated fabrication procedures. [14] Metal halide perovskite solar cells (PSCs) have gained tremendous attention due to their high power conversion efficiencies (PCEs) and potential for low-cost manufacturing. Their wide and tunable bandgap makes perovskites an ideal candidate for tandem solar cells (TSCs) with well-established narrow bandgap photovoltaic technologies, such as crystalline silicon and Cu(In,Ga)Se 2 , to boost the PCEs beyond the Shockley-Queisser limit at affordable additional cost. Although perovskite-based TSCs have shown rapid progress over the past few years, they are far from reaching the...

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“…46,111 It should be noted, however, that lead-free PV devices typically possess lower performances and therefore still require substantial further development. To mitigate this issue, Li et al 112 developed an on-device lead sequestration strategy based on leadbased PPVs to effectively prevent the leakage of lead in order to minimise their ecotoxicity (Fig. 12a).…”

Section: Ecotoxicitymentioning

confidence: 99%

Indoor application of emerging photovoltaics—progress, challenges and perspectives

et al. 2020

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On-device lead sequestration for perovskite solar cells

Cited by 322 publications

References 33 publications

Down-Shifting and Anti-Reflection Effect of CsPbBr3 Quantum Dots/Multicrystalline Silicon Hybrid Structures for Enhanced Photovoltaic Properties

Down-Shifting and Anti-Reflection Effect of CsPbBr3 Quantum Dots/Multicrystalline Silicon Hybrid Structures for Enhanced Photovoltaic Properties

Near‐Infrared‐Transparent Perovskite Solar Cells and Perovskite‐Based Tandem Photovoltaics

Indoor application of emerging photovoltaics—progress, challenges and perspectives

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