Observation of Poole–Frenkel effect saturation in SiO2 and other insulating films

Harrell, William R.; Frey, J.

doi:10.1016/s0040-6090(99)00344-2

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Cited by 132 publications

(97 citation statements)

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“…The usually used case r = 1 is specified theoretically to high donor trap concentration so that the Fermi level is essentially at the donor trap level. The parameter r can take the value 2 when the insulator contains low or negligible trap density what is called the original PF effect [22,23]. Simmons [24] showed that Eq.…”

Section: Theoretical Backgroundmentioning

confidence: 99%

DC electronic transport mechanisms in some manganese-oxide insulator thin films grown on Si substrates

Dakhel¹

2006

Journal of Alloys and Compounds

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Section: Theoretical Backgroundmentioning

confidence: 99%

DC electronic transport mechanisms in some manganese-oxide insulator thin films grown on Si substrates

Dakhel¹

2006

Journal of Alloys and Compounds

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“…FP emission is a thermal emission of trapped carriers from within a barrier. Within this model, the current density J is described as a function of the electric field E by the equation [24] J ¼ AEe…”

Section: Resultsmentioning

confidence: 99%

Tunable photoluminescence and electroluminescence of size-controlled silicon nanocrystals in nanocrystalline-Si/SiO2 superlattices

Creazzo

Redding

Marchena

et al. 2010

Journal of Luminescence

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“…The mechanism which a certain I-V characteristics should follow depends on the sample type, structure, and conditions of preparation. The relationship between the current density J and the applied voltage V at temperature T according to PooleFrenkel (PF) mechanism is given in ref [22,23] by:…”

Section: Resultsmentioning

confidence: 99%

DC conduction processes in nickel‐dimethylglyoxime films

Dakhel¹

2005

Cryst. Res. Technol.

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Thin nickel-dimethylglyoxime Ni(DMG) 2 films of amorphous and crystalline structures were prepared by vacuum sublimation on glass and p-type Si substrates. The films were characterised by X-ray diffraction. The constructed Al/Ni(DMG) 2 /Si(p) MIS devices were characterised by the measurement of their capacitance as a function of gate voltage. The dc-electrical conduction of the Ni(DMG) 2 films grown on silicon substrate were studied at room temperature and in a temperature range of 293 -323 K. The dc current-voltage data of both amorphous and crystalline insulator follow the trap-charge-limited space-charge-limited conductivity mechanism with the characteristic trap energy E t of about 0.05 eV. The total concentration and the energy distribution of the traps were determined.

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Observation of Poole–Frenkel effect saturation in SiO2 and other insulating films

Cited by 132 publications

References 23 publications

DC electronic transport mechanisms in some manganese-oxide insulator thin films grown on Si substrates

DC electronic transport mechanisms in some manganese-oxide insulator thin films grown on Si substrates

Tunable photoluminescence and electroluminescence of size-controlled silicon nanocrystals in nanocrystalline-Si/SiO2 superlattices

DC conduction processes in nickel‐dimethylglyoxime films

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