DC electronic transport mechanisms in some manganese-oxide insulator thin films grown on Si substrates

Charge trapping and ac-electrical conduction in nanocrystalline erbium manganate film on Si substrate

“…Such behaviour of J(T) was also observed in aluminum oxide insulators grown on Si [42] and in crystalline ␣-Mn 2 O 3 , MnO, and Dy-Mn oxide films in our previous investigations [43,44].…”

DC-conduction mechanism in crystalline oxidised La and La–Mn films grown on p-Si substrate

“…Also, as long as (J 0 /E ox ) = σ 0 ∼ 10 −6 S/cm 10 3 S/cm, then the hopping was realised between localised states (not extended states) [43,44]. Such behaviour of J(T) was also observed in aluminum oxide insulators grown on Si [45] and in crystalline ␣-Mn 2 O 3 , MnO, and Dy-Mn oxide films in our previous investigations [38,46]. Therefore, the mechanism, which is responsible for the current transfer in these oxide films, is not only the RS mechanism, but superimpose with another one.…”

Influence of Be doping on the characteristics of CdO/p-Si heterojunction for optoresponse applications

“…The current flow through the constructed p-n heterojunctions is controlled mainly by the interface layer properties especially for low voltages and the CdO layer properties for higher voltages. Among many types of mechanisms that control the d.c. current flow in insulators and semiconductors, the space-charge-limited current (SCLC) is considered (Sze 1981;Dakhel 2006). According to the SCLC mechanism, the I-V characteristics are described by I ~ V s , where s is n = 2 for usual SCLC mechanism, and n > 2 for trap-charge-limited conductivity (TCLC) mechanism.…”