Numerical Simulation of β-Ga2O3 Single Crystal Growth by Czochralski Method with an Insulation Lid

Abstract

The effect of an insulation lid on the growth of 4-inch β-Ga2O3 single crystals by the Czochralski method is analyzed by numerical simulation. The insulation lid mainly hinders upward radiant heat transfer from the melt and crucible and increases the axial temperature gradient in the crystal. Such benefits make the melt/crystal interface convex, which is conducive to suppressing spiral growth and growing large crystals with high quality. Materials with low thermal conductivity λ and low emissivity ε are the optimal choices for making an insulation lid. The inner hole has a great influence on the isolation of radiant heat, and it is determined that the maximum size of the inner diameter Din should not be larger than 130 mm. Thermal stress analysis results indicated that the insulation lid will cause a better stress distribution, illustrating the effect of the insulation lid on the quality of a cylindrical crystal.

Growth of (100) β-Ga2O3 single crystal by controlling the capillary behaviors in EFG system

“…This might be attributed to the asymmetric temperature gradient along the die, which also induced the different shouldering angles from side to side. 28) On the other hand, as shown in Fig. 5(b), the growth condition with W crystal /W die ratios below 0.73 was rather different, and the crystal quality also significantly decreased.…”