Growth of (100) β-Ga₂O₃ single crystal by controlling the capillary behaviors in EFG system

Abstract

We performed the numerical simulation of edge-define film-fed growth (EFG) to find the appropriate capillary conditions of Ga2O3 melt. Meniscus and capillary rise were considerably affected by the design of the slits in EFG system. As an example, the ratio of the seed crystal and slit width was > 0.72 with the slit width of 4.4 mm. Narrower slit width resulted in higher capillary rise with longer process time compared to wider slit width. Under the conditions consistent with the simulation results, highly crystalline (100) β-Ga2O3 single crystals were successfully achieved.

Influence of Active Afterheater in the Crystal Growth of Gallium Oxide via Edge-Defined Film-Fed Growing Method

“…Since the radiation is proportional to the power of temperature, the radiant heat transfer is particularly important at the high growing temperatures over 1800 • C in the crystal growth of gallium oxide. The radiant heat transfer was calculated using the equation below [19,20]:…”

“…where ρ, ∂u ∂t , τ, p were the density [kg/m 3 ], velocity change with time, viscous stress, and pressure [Pa]. And F gra and F em f were the gravity force density and electromagnetic force density, respectively [19,20].…”