We performed the numerical simulation of edge-define film-fed growth (EFG) to find the appropriate capillary conditions of Ga2O3 melt. Meniscus and capillary rise were considerably affected by the design of the slits in EFG system. As an example, the ratio of the seed crystal and slit width was > 0.72 with the slit width of 4.4 mm. Narrower slit width resulted in higher capillary rise with longer process time compared to wider slit width. Under the conditions consistent with the simulation results, highly crystalline (100) β-Ga2O3 single crystals were successfully achieved.

Recently sapphire crystals are used in LED applications. The Czochralski (CZ) growth process is one of the most important techniques for growing high quality sapphire single crystal. A successful growth of perfect single crystals requires the control of heat and mass transport phenomena in the CZ growth furnace. In this study, the growth processes of the sapphire crystal in an inductively heated CZ furnace have been analyzed numerically using finite element method. The results shown that the high temperature positions moved from the crucible surface to inside the melt and the crystalmelt interface changed to the flat shape when the rpm was increased. Also the crystal-melt interface shape has been influenced by the shoulder shape of the grown crystal during the initial stage.