Heat transfer in β-Ga2O3 crystal grown through a skull melting method

Kakimoto, Koichi; Takahashi, Isao; Tomida, Taketoshi; Kochurikhin, Vladimir V.; Kamada, Kei; Nakano, Satoshi; Yoshikawa, Akira

doi:10.1016/j.jcrysgro.2023.127553

Journal of Crystal Growth

2024

DOI: 10.1016/j.jcrysgro.2023.127553

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Heat transfer in β-Ga2O3 crystal grown through a skull melting method

Koichi Kakimoto,

Isao Takahashi,

Taketoshi Tomida

et al.

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Cited by 2 publications

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Growth process, defects, and dopants of bulk β-Ga2O3 semiconductor single crystals

Wang,

Zhu,

Liu

2024

China Foundry

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Growth process, defects, and dopants of bulk β-Ga2O3 semiconductor single crystals

Wang,

Zhu,

Liu

2024

China Foundry

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Prospects for β-Ga₂O₃: now and into the future

Sasaki

2024

Appl. Phys. Express

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This review describes the progress of research on gallium oxide as a material for power devices, covering the development of bulk crystal growth through to epitaxial growth, defect evaluations, device processes and development, all based on the author's research experiences. During the last decade or so, the epi-wafer size has been expanded to 4–6 inches, and Schottky barrier diodes and field-effect transistors capable of ampere-class operation and with breakdown voltages of several kV have been demonstrated. On the other hand, challenges to the practical application of gallium oxide power devices, such as the cost of epi-wafers, killer defects, purity of epitaxial layer, etc., have also become apparent. This paper provides a comprehensive summary of the history of these developments, including not only papers but also patents and conference presentations, and gives my personal views on the prospects for this material’s continued development.

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Heat transfer in β-Ga2O3 crystal grown through a skull melting method

Cited by 2 publications

References 17 publications

Growth process, defects, and dopants of bulk β-Ga2O3 semiconductor single crystals

Growth process, defects, and dopants of bulk β-Ga2O3 semiconductor single crystals

Prospects for β-Ga₂O₃: now and into the future

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Heat transfer in β-Ga2O3 crystal grown through a skull melting method

Cited by 2 publications

References 17 publications

Growth process, defects, and dopants of bulk β-Ga2O3 semiconductor single crystals

Growth process, defects, and dopants of bulk β-Ga2O3 semiconductor single crystals

Prospects for β-Ga2O3: now and into the future

Contact Info

Product

Resources

About

Prospects for β-Ga₂O₃: now and into the future