Numerical simulation of broad-area high-power semiconductor laser amplifiers

Dai, Zheng; Michalzik, Rainer; Unger, Peter; Ebeling, Karl Joachim

doi:10.1109/3.644107

Cited by 39 publications

(5 citation statements)

References 40 publications

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“…The superior directionality and beam quality of upconversion ultraviolet microcavity laser is crucial for application. [26,27] The temporal dynamic of single-mode upconversion laser promotes us to explore the transient decay process in microcavity. Thus, the measurement of emission lifetime via time-correlated single-photon counting (TCSPC) method is performed, as shown in Figure 4.…”

Section: Resultsmentioning

confidence: 99%

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Ultra‐Low Threshold Single‐Mode Upconversion Lasing in a Strong Coupled Microcavity via Four‐Photon Absorption

Wang,

Zheng

et al. 2023

Advanced Optical Materials

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With the development of ultra‐fast optical technology, the nonlinear interaction between light and matter has attracted great attention. Upconversion laser generation through multiphoton absorption (MPA) enables numerous critical applications such as quantum signal processing, biophotonics, and 3D microfabrication. Herein, an ultra‐low threshold single‐mode four‐photon absorption (4PA) upconversion lasing at room‐temperature (RT) by constructing a strong‐coupling microcavity is demonstrated. The planar microcavity significantly enhances the 4PA nonlinear interaction, which facilitates the obtainment of low‐threshold upconversion lasing with an excellent output divergence angle and beam quality. In addition, the temporal dynamic mechanism and polarization characteristics of single‐mode upconversion lasing are also comprehensively discussed. The work provides a feasible approach to fabricate a low‐threshold single‐mode upconversion laser through high‐order nonlinear MPA processes.

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Section: Resultsmentioning

confidence: 99%

“…The superior directionality and beam quality of upconversion ultraviolet microcavity laser is crucial for application. [ 26,27 ]…”

Section: Resultsmentioning

confidence: 99%

Ultra‐Low Threshold Single‐Mode Upconversion Lasing in a Strong Coupled Microcavity via Four‐Photon Absorption

Wang,

Zheng

et al. 2023

Advanced Optical Materials

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“…This solution can be calculated before the iterative procedure, because it does not depend on the optical field and thus it is not time-dependent. Second we compute the temperature distribution from the quantum well heat sources with a convolution of a thermal response function similar to [10,11]. The response function of the waveguide layer system and the cooling configuration is obtained from a finite element simulation in advance.…”

Section: Calculation Model Comprising Thermal Effectsmentioning

confidence: 99%

Numerical simulation and optimization of microstructured high brightness broad area laser diodes

Eckstein

Zeitner

Tünnermann

et al. 2015

Novel in-Plane Semiconductor Lasers XIV

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The development of broad area laser diodes towards higher output power, efficiency and brightness is essential to gain progress in almost all laser applications because those devices provide the basis for high power laser sources. To systematically improve the characteristics of high power broad area laser diodes through a design process, it is necessary to have an accurate and efficient computation model self-consistently taking into account optical, electrical and thermal properties. In this publication we present numerical techniques to compute the optical properties of the multimode beam generated by high power AlGaAs broad area laser diodes with an operating wavelength of 970 nm. This simulation considers fluctuations of the carrier and power density as well as the temperature distribution. The numerical results show an excellent agreement to measured data of conventional and microstructured high power broad area lasers. The high computation speed of the model allows optimizing microstructures inside the laser resonator with the use of a genetic optimization algorithm. We show that this design approach potentially leads to a substantial performance gain of the device. In particular degradation of the beam quality due to thermal effects at high injection currents can be controlled

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“…Non-diffraction-limited beam characteristics of such LDs are caused by filamentation. In general, the origin of filamentation has been explained by optical non-linear mechanisms [3,4]. There are two types of non-linear mechanisms for filamentation: (i) the carrier-induced index change due to spatial hole burning; (ii) self-focusing due to the thermal-induced index change.…”

Section: Introductionmentioning

confidence: 99%

Effects of the linewidth enhancement factor on filamentation in 1.55 m broad-area laser diodes

Heo

Han

Lee

et al. 2003

Semicond. Sci. Technol.

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Broad-area laser diodes with different linewidth enhancement factors (α-factors) of 2 and 4 have been fabricated on 1.55 µm multi-quantum well structures. Far-field measurements show that the filamentation of the laser diodes is closely related to the α-factor. The full width at half maximum (FWHM) of the far-fields and the filamentation were reduced in the laser diodes with smaller α-factors. As the injection current increased, the FWHM of the far-fields also increased regardless of the value of the α-factor. This phenomenon is explained by the reduction of the filament spacing as the injection current increased. A qualitative explanation of filamentation mechanisms is given by introducing the notion of sub-aperture.

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Numerical simulation of broad-area high-power semiconductor laser amplifiers

Cited by 39 publications

References 40 publications

Ultra‐Low Threshold Single‐Mode Upconversion Lasing in a Strong Coupled Microcavity via Four‐Photon Absorption

Ultra‐Low Threshold Single‐Mode Upconversion Lasing in a Strong Coupled Microcavity via Four‐Photon Absorption

Numerical simulation and optimization of microstructured high brightness broad area laser diodes

Effects of the linewidth enhancement factor on filamentation in 1.55 m broad-area laser diodes

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