Although various colloidal quantum dot (QD) coating and patterning techniques have been developed to meet the demands in optoelectronic applications over the past years, each of the previously demonstrated methods has one or more limitations and trade-offs in forming multicolor, high-resolution, or large-area patterns of QDs. In this study, we present an alternative QD patterning technique using conventional photolithography combined with charge-assisted layer-by-layer (LbL) assembly to solve the trade-offs of the traditional patterning processes. From our demonstrations, we show repeatable QD patterning process that allows multicolor QD patterns in both large-area and microscale. Also, we show that the QD patterns are robust against additional photolithography processes and that the thickness of the QD patterns can be controlled at each position. To validate that this process can be applied to actual device applications as an active material, we have fabricated inverted, differently colored, active QD light-emitting device (QD-LED) on a pixelated substrate, which achieved maximum electroluminescence intensity of 23 770 cd/m, and discussed the results. From our findings, we believe that our process provides a solution to achieving both high-resolution and large-scale QD pattern applicable to not only display, but also to practical photonic device research and development.

Flexible perovskite solar cells (PSCs) have attracted considerable attention due to their excellent performance, low-cost, and great potential as an energy supplier for soft electronic devices. In particular, the design of charge transporting layers (CTLs) is crucial to the development of highly efficient and flexible PSCs. Herein, nanocrystalline Ti-based metal-organic framework (nTi-MOF) particles are synthesized to have ca. 6 nm in diameter. These are then well-dispersed in alcohol solvents in order to generate electron transporting layers (ETLs) in PSCs under ambient temperatures using a spin-coating process. The electronic structure of nTi-MOF ETL is found to be suitable for charge injection and transfer from the perovskite to the electrodes. The combination of a [6,6]-phenyl-C-butyric acid (PCBM) into the nTi-MOF ETL provides for efficient electron transfer and also suppresses direct contact between the perovskite and the electrode. This results in impressive power conversion efficiencies (PCEs) of 18.94% and 17.43% for rigid and flexible devices, respectively. Moreover, outstanding mechanical stability is retained after 700 bending cycles at a bending radius ( r) of 10 mm.

For realizing flexible perovskite solar cells (PSCs), it is important to develop low‐temperature processable interlayer materials with excellent charge transporting properties. Herein, a novel polymeric hole‐transport material based on 1,4‐bis(4‐sulfonatobutoxy)benzene and thiophene moieties (PhNa‐1T) and its application as a hole‐transport layer (HTL) material of high‐performance inverted‐type flexible PSCs are introduced. Compared with the conventionally used poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), the incorporation of PhNa‐1T into HTL of the PSC device is demonstrated to be more effective for improving charge extraction from the perovskite absorber to the HTL and suppressing charge recombination in the bulk perovskite and HTL/perovskite interface. As a result, the flexible PSC using PhNa‐1T achieves high photovoltaic performances with an impressive power conversion efficiency of 14.7%. This is, to the best of our knowledge, among the highest performances reported to date for inverted‐type flexible PSCs. Moreover, the PhNa‐1T‐based flexible PSC shows much improved stability under an ambient condition than PEDOT:PSS‐based PSC. It is believed that PhNa‐1T is a promising candidate as an HTL material for high‐performance flexible PSCs.

Three-order enhanced upconversion luminescence from upconversion nanoparticles is suggested by way of a promising platform utilizing a disordered array of plasmonic metal nanoparticles. Its application toward highly sensitive NIR photodetectors is discussed.

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