The combination of a 10.6 μm main pulse CO2 laser and a 1064 nm pre-pulse Nd:YAG laser in EUV source concepts for HVM would require collector mirrors with an integrated spectral purity filter that suppresses both laser wavelengths. This paper discusses a new approach of a dual-wavelength spectral purity filter to suppress 10.6 μm and 1064 nm IR radiation at the same time. The dual-wavelength spectral purity filter combines two binary phase gratings that are optimized for 10.6 μm and 1064 nm, respectively. The dual phase grating structure has been realized on spherical sub-aperture EUV collector mirrors having an outer diameter of 150 mm. IR suppression factors of 260 at 10.6 μm and 620 at 1064 nm have been measured on the sub-aperture EUV collector while its EUV reflectance exceeded 64 % at 13.5 nm
We report on results obtained with an aspherical mirror to compensate for the phase front aberrations of a cw thin-disk laser with a single disk in the resonator. A record output power of 5 kW with a beam quality suitable for laser cutting (beam propagation factor M2=9.2) has been achieved.
We developed a novel LED projection based direct write grayscale lithography system for the generation of optical surface profiles such as micro-lenses, diffractive elements, diffusors, and micro freeforms. The image formation is realized by a LCoS micro-display which is illuminated by a 405 nm UV High Power LED. The image on the display can be demagnified from factors 5x to 100x with an exchangeable lens. By controlling exposure time and LED power, the presented technique enables a highly dynamic dosage control for the exposure of h-line sensitive photo resist. In addition, the LCoS micro-display allows for an intensity control within the micro-image which is particularly advantageous to eliminate surface profile errors from stitching and limited homogeneity from LED illumination. Together with an accurate calibration of the resist response this leads to a superior low surface error of realized profiles below <0.2% RMS. The micro-display is mounted on a 3-axis (XYθ) stage for precise alignment. The substrate is brought into position with an air bearing stage which addresses an area of 500 × 500 mm2 with a positioning accuracy of <100 nm. As the exposure setup performs controlled motion in the z-direction the system to maintain the focal distance and lithographic patterning on non-planar surfaces to some extent. The exposure concept allows a high structure depth of more than 100 μm and a spatial resolution below 1 μm as well as the possibility of very steep sidewalls with angles larger than >80°. Another benefit of the approach is a patterning speed up to 100 cm2/h, which allows fabricating large-scale optics and microstructures in an acceptable time. We present the setup and show examples of micro-structures to demonstrate the performance of the system, namely a refractive freeform array, where the RMS surface deviation does not exceed 0.2% of the total structure depth of 75 μm. Furthermore, we show that this exposure tool is suitable to generate diffractive optical elements as well as freeform optics and arrays with a high aspect ratio and structure depth showing a superior optical performance. Lastly we demonstrate a multi-level diffraction grating on a curved substrate
To increase the brightness of broad area laser diodes, it is necessary to tailor the optical properties of their waveguide region. For this purpose, there is the need for simulation tools which can predict the optical properties of the complete device and thus of the outcoupled light. In the present publication, we show a numerical method to calculate typical intensity distributions of the multimode beam inside a high-power semiconductor laser. The model considers effects of mode competition and the influence of the gain medium on the optical field. Simulation results show a good agreement with near and far field measurements of the analyzed broad area laser diodes.
By broadening the stripe width of the active waveguide region, it is possible to extract high optical powers from semiconductor broad area lasers. However, a weak output beam quality, optical filamentation, and high peak power densities will result, which are invoked by the amplification of higher order modes. We show an approach to influence the optical field inside the resonator by integrating optical phase structures directly into the waveguide. Those elements offer the possibility to enlarge the active gain area for the desired fundamental laser mode, while additional diffraction losses for higher order modes are generated, thus achieving an improved beam quality. We report on considerations in designing those elements and demonstrate a first experimental realization.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.