Numerical simulation of a new SiC growth system by the dual-directional sublimation method

Chen, Xuejiang; Nishizawa, Shin Ichi; Kakimoto, Koichi

doi:10.1016/j.jcrysgro.2010.02.027

Cited by 9 publications

(5 citation statements)

References 20 publications

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“…As seen from Figure 10d, the T_R is non-axisymmetric for the spiral coil, and the worse T_R are presented in the region far from the center of crystal which may generate more defects. Defects in SiC crystal-such as dislocation, microtubules, etc.-are generated mainly by non-uniform temperature gradient [2,13,19]. Figure 10 presents fields of temperature and temperature gradient (T_R, K/m) in r-direction on rθ cross section in the crystal.…”

Section: Resultsmentioning

confidence: 99%

Numerical Simulation of Temperature Fields in a Three-Dimensional SiC Crystal Growth Furnace with Axisymmetric and Spiral Coils

et al. 2018

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Three-dimensional numerical simulation platform for silicon carbide crystal growth furnace was established using C programing language, where a physical model of the furnace was built based on cylindrical coordinates; governing equations for electromagnetic and temperature fields were discretized by finite volume method; radiation characteristics were studied with the help of S2S model (surface to surface radiation model); and the least distance method was proposed to check radiation faces visibility efficiently. LU decomposition algorithm based on graphic processing unit (GPU) technology was developed to accelerate the solving process of surface to surface radiation. Then the radiation heat transfer in silicon carbide crystal (SiC) growth chamber and temperature field of silicon carbide growth furnace were studied quantificationally at I = 1250 A and F = 16 kHz. The effects of coil structures (axisymmetric and spiral) on temperature field and its gradient distributions were investigated by standard deviation method. The simulation results demonstrate that spiral electromagnetic coil generates non-axisymmetric temperature field easily; the radiation heat flux is 10 2~1 0 3 times more than conduction heat flux, radiation heat transfer is helpful to increase temperature evenness; the spiral temperature field on the SiC crystal cross-section reduces the poor homogeneity of temperature gradient, which will cause crystal to generate large defects.

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Section: Resultsmentioning

confidence: 99%

Numerical Simulation of Temperature Fields in a Three-Dimensional SiC Crystal Growth Furnace with Axisymmetric and Spiral Coils

et al. 2018

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“…Numerical simulation has therefore developed rapidly in recent years as a powerful tool to study the multi-physics phenomena in a single-crystal SiC growth system. [14][15][16][17][18][19][20][21][22][23][24][25][26][27] The heat and mass transfer including chemical reactions during SiC bulk growth was first simulated using a numerical model by Hofmann et al in 1995, [28] which showed a negligible effect of convection on the heat transfer. Chen et al proposed a 2-D flow-kinetics model that coupled the 2-D gas flow calculations and the growth kinetics at the crystal interface, [29] assuming that the growth rate is proportional to the supersaturation of a rate-determining species.…”

Section: Introductionmentioning

confidence: 99%

“…Numerical simulation has therefore developed rapidly in recent years as a powerful tool to study the multi‐physics phenomena in a single‐crystal SiC growth system. [ 14–27 ] The heat and mass transfer including chemical reactions during SiC bulk growth was first simulated using a numerical model by Hofmann et al. in 1995, [ 28 ] which showed a negligible effect of convection on the heat transfer.…”

Section: Introductionmentioning

confidence: 99%

Numerical Simulation of the Transport of Gas Species in the PVT Growth of Single‐Crystal SiC

Xu,

Han,

et al. 2024

Cryst. Res. Technol.

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Single‐crystal silicon carbide (SiC) is an important semiconductor material for the fabrication of power and radio frequency (RF) devices. The major technique for growing single‐crystal SiC is the so‐called physical vapor transport (PVT) method, in which not only the thermal field but also the fluid‐flow field and the distribution of gas species can be hardly measured directly. In this study, a multi‐component flow model is proposed that includes the inside and outside of a growth chamber and a joint between the seed crystal holder and crucible which allows exchanges of the gas species. The joint is simulated as a thin porous graphite sheet. The Hertz‐Knudsen equation is used to describe the sublimation and deposition. The convection and diffusion are described by the Navier–Stokes equations and mixture‐averaged diffusion model, in which the Stefan flow is taken into account. The numerical simulations are conducted by the finite element method (FEM) with a multi‐physics coupled model, which is able to predict the fluid flow field, species distribution field, crystal growth rate, and evolution of the molar concentration of dopant gas. Using this model, the effects of several experimental conditions on the transport of gas species and the growth rate of single‐crystal SiC are analyzed.

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“…The additional flat heater placed under the main cylindrical heater did not change the temperature distribution in the mass transfer area, while attempts of the use of the additional flat heater above the seed in a cylindrical arrangement do not prove the possibility for obtaining a proper shape of the crystallization front [1]. As the heat outflow from the seed in the two-source model [3] is a nontrivial problem, its application to the SiC crystallization seems to be questionable, too. In this context, the conception of two cylindrical heaters, in our opinion, is worth further study.…”

mentioning

confidence: 99%

“…There are known from the literature theoretical projects of crystallization between two flat heaters [2] or two material sources (hotter than the seed) [3]. The numerical simulation of the system with the additional heater located below the source material suggested a low effect of the bottom heater.…”

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confidence: 99%

Experimental Verification of a Novel System for the Growth of SiC Single Crystals

Grasza

Tymicki

Racka

et al. 2011

MSF

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A set of single crystal growth experiments was performed in the new resistively heated two-heater furnace, which plays the role of an induction furnace with a moving coil. In this new experimental setup we are able to control the shape of the crystallization front, from flat to extremely convex. The positive results of the experimental tests differ significantly from prior discouraging interpretation of computational modeling results obtained by a commonly used software, previously presented in the literature. The essence of a new regulation of the temperature field during the crystal growth is a displacement of the maximum of the temperature field, which at the beginning of the growth is located close to the seed and it moves towards the source material as the crystal length increases. In this way, the crystallization front is heated with a similar intensity regardless the increasing crystal length.

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Numerical simulation of a new SiC growth system by the dual-directional sublimation method

Cited by 9 publications

References 20 publications

Numerical Simulation of Temperature Fields in a Three-Dimensional SiC Crystal Growth Furnace with Axisymmetric and Spiral Coils

Numerical Simulation of Temperature Fields in a Three-Dimensional SiC Crystal Growth Furnace with Axisymmetric and Spiral Coils

Numerical Simulation of the Transport of Gas Species in the PVT Growth of Single‐Crystal SiC

Experimental Verification of a Novel System for the Growth of SiC Single Crystals

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