Numerical Simulation of the Transport of Gas Species in the PVT Growth of Single‐Crystal SiC
Binjie Xu,
Xuefeng Han,
Suocheng Xu
et al.
Abstract:Single‐crystal silicon carbide (SiC) is an important semiconductor material for the fabrication of power and radio frequency (RF) devices. The major technique for growing single‐crystal SiC is the so‐called physical vapor transport (PVT) method, in which not only the thermal field but also the fluid‐flow field and the distribution of gas species can be hardly measured directly. In this study, a multi‐component flow model is proposed that includes the inside and outside of a growth chamber and a joint between t… Show more
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