Experimental Verification of a Novel System for the Growth of SiC Single Crystals

Abstract

A set of single crystal growth experiments was performed in the new resistively heated two-heater furnace, which plays the role of an induction furnace with a moving coil. In this new experimental setup we are able to control the shape of the crystallization front, from flat to extremely convex. The positive results of the experimental tests differ significantly from prior discouraging interpretation of computational modeling results obtained by a commonly used software, previously presented in the literature. The essence of a new regulation of the temperature field during the crystal growth is a displacement of the maximum of the temperature field, which at the beginning of the growth is located close to the seed and it moves towards the source material as the crystal length increases. In this way, the crystallization front is heated with a similar intensity regardless the increasing crystal length.