Numerical modeling of InGaN/GaN p-i-n solar cells under temperature and hydrostatic pressure effects

Abstract

The present paper deals with the modeling of the simultaneous impact of temperature and applied hydrostatic pressure on the electronic characteristics and electrical parameters in In0.2Ga0.8N/GaN p-i-n solar cells. The energy conduction band is calculated with a self-consistent model coupled with the photovoltaic parameters taking into consideration the spontaneous and piezoelectric polarizations. A new efficient numerical model based on the difference finite method is well suited to theoretical and experimental data. The results reveal that the hydrostatic pressure has a beneficial effect on the behavior of cells on the N-face configuration, whereas the elevated temperature has a destructive impact on these devices.

Numerical modeling of p-i-n GaAs solar cell performance

“…The numerical resolution of the continuity equations for minority carriers in each zone is used to calculate the current densities. This method is based on Thomas's algorithm, which is special to the resolution of tridiagonal matrix [19][20][21]. In this study, The main goal is to first simulate a homojunction 𝐴𝐴𝐴𝐴𝐴𝐴𝐴𝐴 solar cell using the finite difference method in order to evaluate photoelectric parameters (photocurrent density, doping levels of the emitter and base layers), geometrics (thickness of different regions), and then to improve solar cell efficiency by using 𝐴𝐴𝐴𝐴 x 𝐴𝐴𝐴𝐴 (1-x) 𝐴𝐴𝐴𝐴 (𝑥𝑥 = 0.8) type material as a window layer.…”

InxGa1-xN/GaN double heterojunction solar cell optimization for high temperature operation

“…From the inset of Fig. 7, it is worth to note that when the concentration of the GaN layer increases, carrier confinement on the absorber side increases, resulting in an apparent reduction of the potential barrier at the interface [48,49]. The efficiency maximum increases to 12,2% and its position is shifted toward the higher Indium contents and lower temperatures.…”

Effect of hydrostatic pressure on the Auger coefficient of InGaN/GaN multiple-quantum-well laser diode

“…To investigate external perturbation, such as pressure and the effect of the overlap integral, which has a direct relationship with the quantum confinement, the wave functions of the first subband of the carriers (ψ) were considered to calculate the localization length in the z-axis as ðΔzÞ ¼ ∫ jðz − hziÞψj 2 dz, where hzi ¼ ∫ zjψj 2 dz. 41 The limits of the integral are taken into account from the center of the neighboring barrier adjacent to the center of the quantum well. The electron density in the quantum well is written as 42 E Q -T A R G E T ; t e m p : i n t r a l i n k -; e 0 0 5 ; 1 1 4 ; 1 7 6 n w ðzÞ ¼…”

“…In calculating the band gap energy and SP polarization that rely on indium molar fraction, indium molar fraction was considered independent of the location (along the well and barrier). To investigate external perturbation, such as pressure and the effect of the overlap integral, which has a direct relationship with the quantum confinement, the wave functions of the first subband of the carriers (ψ) were considered to calculate the localization length in the z-axis as (Δz)=∫|(z−⟨z⟩)ψ|2dz, where ⟨z⟩=∫z|ψ|2dz 41 . The limits of the integral are taken into account from the center of the neighboring barrier adjacent to the center of the quantum well.…”