InxGa1-xN/GaN double heterojunction solar cell optimization for high temperature operation

Chouchen, Bilel; Ducroquet, F.; Nasr, Samia; Hajjiah, Ali; Gazzah, Mohamed Hichem

doi:10.1016/j.solmat.2021.111446

Cited by 12 publications

(3 citation statements)

References 58 publications

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“…That is why in our proposed cell, the buffer consists of In 0.1 Ga 0.9 N due to its high band gap. The same ideas were taken in the study carried out by [25,26].…”

Section: Proposed Cellmentioning

confidence: 99%

Simulation study of the tunnel junction position effect on the parameters of the In_xGa_1-xN dual junction solar cell

Aoulmit,

Bekhouche,

Kaghouche

et al. 2023

Eng. Res. Express

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The present work presents a SILVACO-Atlas numerical simulation to investigate the effect of the tunnel junction position on the performance of InxGa1-xN double-junction solar cells under AM1.5 solar illumination. The proposed cell is composed of two PN sub-cells, an upper sub-cell in In0.1Ga0.9N and a lower sub-cell in In0.4Ga0.6N for the p-type and In0.2Ga0.8N for the n-type, connected by a tunnel junction in In0.4Ga0.6N. The cell offers a remarkable open-circuit voltage value of about 3.9 V and a good fill shape value of about 93. A cell with a small overall thickness can offer better transfer efficiency than a cell with a large thickness if the tunnel junction position is carefully chosen. The proposed cell can achieve a transfer efficiency of around 18% with an overall thickness of 0.652 µm.

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“…That is why in our proposed cell, the buffer consists of In 0.1 Ga 0.9 N due to its high band gap. The same ideas were taken in the study carried out by [25,26].…”

Section: Proposed Cellmentioning

confidence: 99%

Simulation study of the tunnel junction position effect on the parameters of the In_xGa_1-xN dual junction solar cell

Aoulmit,

Bekhouche,

Kaghouche

et al. 2023

Eng. Res. Express

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show abstract

“…However, the growth of crystalline III-V materials requires expensive and complex epitaxial growth techniques. For example, using indium, gallium, and arsenic in many solar cells is undesirable due to certain elements' scarcity, cost, and toxicity [ [9] , [10] , [11] , [12] , [13] ]. p -SnO/n-ZnSnN 2 and p-Si/n-ZnSnN 2 junctions were recently successfully fabricated for photovoltaic applications [ 14 , 15 ].…”

Section: Introductionmentioning

confidence: 99%

Performance evaluation of ZnSnN2 solar cells with Si back surface field using SCAPS-1D: A theoretical study

Laidouci,

Mamta,

Singh

et al. 2023

Heliyon

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“…Recent investigations have spotlighted third-generation solar cells like InGaN solar cells, driven by their potential for high conversion efficiency [36][37][38][39][40]. The InGaN alloy boasts versatile applications in photodetectors, electronic devices [41], and laser diodes [42].…”

mentioning

confidence: 99%

Leveraging InGaN solar cells for visible light communication reception

Manzoor,

Jamshed

et al. 2024

IET Networks

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Solar cells are increasingly being utilised for both energy harvesting and reception in free‐space optical (FSO) communication networks. The authors focus on the implementation of a mid‐band p‐In0.01Ga0.99 N/p‐In0.5Ga0.5 N/n‐In0.5Ga0.5 N (PPN) solar cell, boasting an impressive 26.36% conversion efficiency (under 1.5AM conditions) as a receiver within an indoor FSO communication network. Employing a solar cell with dimensions of 1 mm in length and width, the FSO system underwent simulation using Optisystm software, while the solar cell's behaviour was simulated using SCAPS‐1D. The received power from the solar cell was then compared to that of four commercially available avalanche photodiode (APD) receivers. Exploring incident wavelengths spanning 400–700 nm within the visible spectrum, across transmission distances of 5, 10, 15, and 20 m, the study presented current‐voltage (IV) and power‐voltage curves. Notably, the InGaN solar cell exhibited superior electrical power output compared to all commercial APDs. In conclusion, the findings underscore that augmenting received power has the potential to enhance FSO network quality and support extended transmission distances.

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InxGa1-xN/GaN double heterojunction solar cell optimization for high temperature operation

Cited by 12 publications

References 58 publications

Simulation study of the tunnel junction position effect on the parameters of the In_xGa_1-xN dual junction solar cell

Simulation study of the tunnel junction position effect on the parameters of the In_xGa_1-xN dual junction solar cell

Performance evaluation of ZnSnN2 solar cells with Si back surface field using SCAPS-1D: A theoretical study

Leveraging InGaN solar cells for visible light communication reception

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InxGa1-xN/GaN double heterojunction solar cell optimization for high temperature operation

Cited by 12 publications

References 58 publications

Simulation study of the tunnel junction position effect on the parameters of the InxGa1-xN dual junction solar cell

Simulation study of the tunnel junction position effect on the parameters of the InxGa1-xN dual junction solar cell

Performance evaluation of ZnSnN2 solar cells with Si back surface field using SCAPS-1D: A theoretical study

Leveraging InGaN solar cells for visible light communication reception

Contact Info

Product

Resources

About

Simulation study of the tunnel junction position effect on the parameters of the In_xGa_1-xN dual junction solar cell

Simulation study of the tunnel junction position effect on the parameters of the In_xGa_1-xN dual junction solar cell