Numerical Investigation of Nano-Material Processing by Thermal Plasma Flows

Shigeta, Masaya

doi:10.1007/978-3-642-32454-3_14

Cited by 3 publications

(3 citation statements)

References 24 publications

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“…The causes of the differences are discussed hereinafter. In general, experiments of practical material processing by thermal plasmas inherently include errors because of temporal fluctuations and spatial non-uniformity of temperature and flow fields, as reported from experimental studies [ 80 , 81 ] and earlier computational studies [ 26 , 30 , 82 , 83 , 84 , 85 ]. Such turbulent-like fluid-dynamic behaviors affect not only the evaporation of precursory particles [ 85 , 86 ] but also nanoparticle formation and transport [ 21 , 28 , 29 ].…”

Section: Resultsmentioning

confidence: 99%

Computational Study of Quenching Effects on Growth Processes and Size Distributions of Silicon Nanoparticles at a Thermal Plasma Tail

2021

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In this paper, quenching effects on silicon nanoparticle growth processes and size distributions at a typical range of cooling rates in a thermal plasma tail are investigated computationally. We used a nodal-type model that expresses a size distribution evolving temporally with simultaneous homogeneous nucleation, heterogeneous condensation, interparticle coagulation, and melting point depression. The numerically obtained size distributions exhibit similar size ranges and tendencies to those of experiment results obtained with and without quenching. In a highly supersaturated state, 40–50% of the vapor atoms are converted rapidly to nanoparticles. After most vapor atoms are consumed, the nanoparticles grow by coagulation, which occurs much more slowly than condensation. At higher cooling rates, one obtains greater total number density, smaller size, and smaller standard deviation. Quenching in thermal plasma fabrication is effectual, but it presents limitations for controlling nanoparticle characteristics.

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Section: Resultsmentioning

confidence: 99%

Computational Study of Quenching Effects on Growth Processes and Size Distributions of Silicon Nanoparticles at a Thermal Plasma Tail

2021

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“…High-power and high-pressure inductively coupled thermal plasma (ICTP) has been widely used for various materials processing such as fabrication of diamond films [1], synthesis of fullerene [2], surface modification of materials, nanomaterial [3,4], nanocrystallites [5], nanopowder [6,7] and thermal barrier coatings [8,9]. Another important in ICTP is influence of input power.…”

Section: Introductionmentioning

confidence: 99%

Influence of input power in Ar/H2 thermal plasma with silicon powder by numerical simulation

et al. 2019

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Numerical simulation in inductively coupled thermal plasma was made on the temperature distribution in argon (Ar)+hydrogen (H2) induction thermal plasma torch with silicon (Si) powder injection to obtain the temperature distribution and gas flow fields. The ICTP model was used in this research because it has benefit of good repeatability and no contamination process. Interactions between ICTP and injected powder are very complicated to be understood only by related experiments. Influence of input power in ICTP was numerically investigated on thermal plasma temperature fields and powder evaporation. The temperature distributions of thermal plasma and Si vapor distribution were compared at input powers of 20 kW, 30 kW, and 40 kW. Results indicated that higher input power increases the temperature of the thermal plasma with doughnut shape but it slightly enhances evaporation of the powder at the center axis of the plasma torch.

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“…Modeling of RF plasma began with 1D modeling [33] and has progressed to complete 3D models [34,35]. Moreover, detailed modeling of nanoparticle formation in plasma reactors has been advanced to a degree that quantitative comparison with experimental results has become possible [36][37][38][39][40][41][42][43][44].…”

Section: Introductionmentioning

confidence: 99%

Numerical study of Si nanoparticle formation by SiCl₄hydrogenation in RF plasma

Rehmet

Cao

Cheng

2016

Plasma Sources Sci. Technol.

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Nanocrystalline silicon (nc-Si) is a promising material for many applications related to electronics and optoelectronics. This work performs numerical simulations in order to understand a new process with high deposition rate production of nc-Si in a radio-frequency plasma reactor. Inductive plasma formation, reaction kinetics and nanoparticle formation have been considered in a sophisticated model. Results show that the plasma parameters could be adjusted in order to improve selectivity between nanoparticle and molecule formation and, thus, the deposition rate. Also, a parametric study helps to optimize the system with appropriate operating conditions.

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Numerical Investigation of Nano-Material Processing by Thermal Plasma Flows

Cited by 3 publications

References 24 publications

Computational Study of Quenching Effects on Growth Processes and Size Distributions of Silicon Nanoparticles at a Thermal Plasma Tail

Computational Study of Quenching Effects on Growth Processes and Size Distributions of Silicon Nanoparticles at a Thermal Plasma Tail

Influence of input power in Ar/H2 thermal plasma with silicon powder by numerical simulation

Numerical study of Si nanoparticle formation by SiCl₄hydrogenation in RF plasma

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Numerical Investigation of Nano-Material Processing by Thermal Plasma Flows

Cited by 3 publications

References 24 publications

Computational Study of Quenching Effects on Growth Processes and Size Distributions of Silicon Nanoparticles at a Thermal Plasma Tail

Computational Study of Quenching Effects on Growth Processes and Size Distributions of Silicon Nanoparticles at a Thermal Plasma Tail

Influence of input power in Ar/H2 thermal plasma with silicon powder by numerical simulation

Numerical study of Si nanoparticle formation by SiCl4hydrogenation in RF plasma

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Numerical study of Si nanoparticle formation by SiCl₄hydrogenation in RF plasma