“…In past few decades, aluminum nitride (AlN) has attracted considerable interests because of its exceptional mechanical, thermal, electrical, and optical properties [ 1 - 4 ]. For example, its good thermal conductivity, low dielectric constant, and high electrical resistance as well as thermal expansion coefficient matching to that of silicon offer an application in semiconductor devices as passivation and dielectric layers, and electric substrates [ 5 - 10 ]. Also, as one of wide band-gap semiconductors, aluminum nitride has a promising candidate for optoelectronic and field-emission materials [ 11 , 12 ].…”