Fabrication of Densely Packed AlN Nanowires by a Chemical Conversion of Al2O3Nanowires Based on Porous Anodic Alumina Film

Yuan, Zhihao; Sun, Shao-Qing; Yue-Qin, Duan; Wang, Dajian

doi:10.1007/s11671-009-9368-9

Cited by 18 publications

(9 citation statements)

References 21 publications

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“…Further, device applications of AlN as an optoelectronic and field-emission material could largely benefit from the accomplishment of crystallographically perfect lowdimensional objects such as AlN nanowires. AlN nano-wires [11,12] and AlN nanoribbons [13] have been fabricated and characterized, while computational studies identify AlN nanowires/tubes as a prospective hydrogen storage media [14]. The h-AlN sheet considered in this work represents a prospective low-dimensional object with specific properties for which we perform first-principles calculations.…”

Section: Introductionmentioning

confidence: 99%

Defects in hexagonal-AlN sheets by first-principles calculations

et al. 2012

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Abstract. Theoretical calculations focused on the stability of an infinite hexagonal AlN (h-AlN) sheet and its structural and electronic properties were carried out within the framework of DFT at the GGA-PBE level of theory. For the simulations, an h-AlN sheet model system consisting in 96 atoms per super-cell has been adopted. For h-AlN, we predict a lattice parameter of 1.82 Å and an indirect gap of 2.81 eV as well as a cohesive energy which is by 6% lower than that of the bulk (wurtzite) AlN which can be seen as a qualitative indication for synthesizability of individual h-AlN sheets. Besides the study of a perfect h-AlN sheet also the most typical defects, namely, vacancies, anti-site defects and impurities were also explored. The formation energies for these defects were calculated together with the total density of states and the corresponding projected states were also evaluated. The charge density in the region of the defects was also addressed. Energetically, the anti-site defects are the most costly, while the impurity defects are the most favorable, especially so for the defects arising from Si impurities. Defects such as nitrogen vacancies and Si impurities lead to a breaking of the planar shape of the h-AlN sheet and in some cases to formation of new bonds. The defects significantly change the band structure in the vicinity of the Fermi level in comparison to the band structure of the perfect h-AlN which can be used for deliberately tailoring the electronic properties of individual h-AlN sheets.2

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Section: Introductionmentioning

confidence: 99%

Defects in hexagonal-AlN sheets by first-principles calculations

et al. 2012

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“…The AlN bulk crystallizes in the wurtzite structure in P63mc space group with two interpenetrating hexagonal lattices indicating the possibility for forming the hexagonal network nanostructures. The AlN nanostructures existing in the form of nanocones, nanotubes, nanoribbons, nanosheets, and nanowires have attracted considerable research attention on both experiment 5 6 7 8 9 10 11 12 13 14 and theory 15 16 17 18 19 20 21 22 23 24 . In nanostructures, the AlN hexagon is the predominating structural unit.…”

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confidence: 99%

Half-metallicity and ferromagnetism in penta-AlN2 nanostructure

Fan

Wei

et al. 2016

Sci Rep

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We have performed a detailed first-principles study of the penta-AlN2 nanostructure in the Cairo pentagonal tiling geometry, which is dynamically stable due to the absence of imaginary mode in the calculated phonon spectrum. The formation energy and the fragment cohesive energy analyses, the molecular dynamics simulations, and the mechanical property studies also support the structural stability. It could withstand the temperature as high as 1400 K and sustain the strain up to 16.1% against structural collapse. The slightly buckled penta-AlN2 is found to be a ferromagnetic semiconductor. The strain of ~9% could drive the structural transition from the buckled to the planar. Interestingly, the strain of >7% would change the conducting properties to show half-metallic characters. Furthermore, it could be also used to continuously enhance the magnetic coupling strength, rendering penta-AlN2 as a robust ferromagnetic material. These studies shed light on the possibilities in synthesizing penta-AlN2 and present many unique properties, which are worth of further studying on both theory and experiment.

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“…To conduct successful anodization at grater voltages, oxalic acid has to be applied as the electrolyte. Then aluminum can be anodized at voltage ranging from 20 to 100 V [47, 48,82,94,177,234,246,290,296,297]. Phosphoric acid is applied for the voltage up to 195 V [183,291].…”

Section: Influence Of Operating Conditions On Nanopores' Geometrymentioning

confidence: 99%

Nanoporous Anodic Aluminum Oxide: Fabrication, Characterization, and Applications

Stępniowski

Bojar

2015

Handbook of Nanoelectrochemistry

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Anodic aluminum oxide (AAO) consists of parallel pores arranged in a honeycomb-like array. Since a two-step self-organized approach in anodic alumina fabrication was invented, tremendous attention was paid to this material. Structural features of anodic alumina, like pore diameter, interpore distance, and nanoporous oxide thickness, can be fully controlled by operating conditions, including type, concentration and temperature of the electrolyte, applied voltage, and duration of the anodization process. Moreover, these operating conditions have also a major impact on the nanoporous array arrangement. Quantitative arrangement analysis methods employing fast Fourier transforms have been developed to assess the nanopores' arrangement. The most frequent application of the anodic aluminum oxide is a template-assisted fabrication of nanostructures. Templates made of the AAO are being successfully applied in fabrication of nanowires, nanotubes, and nanodots by using diversity of techniques, including electrochemical deposition, physical and chemical vapor deposition, sol-gel techniques, etc. Due to the size of obtained nanostructures, magnetic, electric, piezoelectric, luminescent, and catalytic properties of the deposited materials can be significantly improved. Thus, control of the nanopores' structural features and arrangement is crucial for AAO applications in nanotechnology.

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Fabrication of Densely Packed AlN Nanowires by a Chemical Conversion of Al2O3Nanowires Based on Porous Anodic Alumina Film

Cited by 18 publications

References 21 publications

Defects in hexagonal-AlN sheets by first-principles calculations

Defects in hexagonal-AlN sheets by first-principles calculations

Half-metallicity and ferromagnetism in penta-AlN2 nanostructure

Nanoporous Anodic Aluminum Oxide: Fabrication, Characterization, and Applications

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