2009
DOI: 10.1016/j.jallcom.2008.10.070
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Synthesis of hexagonal AlN microbelts at low temperature

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Cited by 12 publications
(5 citation statements)
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“…Using the high temperature direction nitridation method, Lei et al synthesized straight and stacked-sheet AlN nanowires with high purity [26]. Through the direction reaction between AlCl 3 and NaN 3 , hexagonal AlN microbelts were grown at a temperature of 450 • C in autoclaves under a dry and pure nitrogen environment [27]. By introducing CaF 2 as dispersant, Yu et al developed a low-temperature CVD method to grow AlN nanorods [28].…”
Section: Introductionmentioning
confidence: 99%
“…Using the high temperature direction nitridation method, Lei et al synthesized straight and stacked-sheet AlN nanowires with high purity [26]. Through the direction reaction between AlCl 3 and NaN 3 , hexagonal AlN microbelts were grown at a temperature of 450 • C in autoclaves under a dry and pure nitrogen environment [27]. By introducing CaF 2 as dispersant, Yu et al developed a low-temperature CVD method to grow AlN nanorods [28].…”
Section: Introductionmentioning
confidence: 99%
“…Wide-bandgap III-V nitride semiconductors have received much attention because of their importance in both scientific research and technological applications [1,2]. Among the group III nitrides, AlN exhibits the largest direct band gap (6.2 eV) [3], a high melting point (3237 K), and a high thermal conductivity (285 W/mK) [4].…”
Section: Introductionmentioning
confidence: 99%
“…Due to aluminum nitride (AlN) ceramics possess some excellent properties such as high thermal conductivity and low thermal expansion coefficient, they have been used as substrate and packaging materials for high-performance electronic devices [1][2]. Carbothermal reduction nitridation (CRN) process is one of the most useful methods to produce aluminum nitride powders [3][4].…”
Section: Introductionmentioning
confidence: 99%