Hexagonal monocrystal aluminum nitride ͑h-AlN͒ nanowires are synthesized through the direct reaction of AlCl 3 with NaN 3 in a nonsolvent system at low temperatures. The h-AlN nanowires are characterized by the high-resolution transmission electron microscope, electron diffraction, x-ray diffraction, and photoluminescence spectra. The analysis shows that the nanowire has a long straight-wire morphology with a diameter ranging from 40 to 60 nm, the longest one up to several micrometers, and they are of pure monocrystal hexagonal or face center structure which has a relatively narrow emission peak, centered at 413 nm ͑3.00 eV͒. In addition, a possible growth mechanism for h-AlN nanowire is discussed.
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