Nucleation and Chemical Vapor Deposition Growth of Polycrystalline Diamond on Aluminum Nitride: Role of Surface Termination and Polarity

Abstract

We have investigated the growth and atomic interface structures of diamond on aluminum nitride (AlN). The two-step chemical vapor deposition technique is used to control diamond nucleation density, crystal size, and AlN surface orientation and polarity. Highly uniform diamond layers with a nucleation density in the range of 10 5 −10 11 cm −2 and a grain size of 0.1−5 μm are fabricated. Crystallographically abrupt interfaces between polycrystalline diamond and single-crystal AlN(0001) layers have been observed via high-resolution transmission electron microscopy and electron energy-loss spectroscopy. A majority of the diamond crystals have been found to have the diamond(111)/AlN(0001) interface relationship. Atomistic models of the bonding mechanism at the heterointerface are used to elucidate experimental observations and the role of hydrogen plasma on the growth of diamond on AlN. Nonpolar and semipolar AlN surfaces have been found to have higher resistance to process plasma and led to better crystallinity of the diamond/AlN heterointerfaces. These results underline the potential of nonpolar and semipolar AlN surfaces for the growth of high-crystal quality diamond/AlN heterointerfaces.

Thick, Adherent Diamond Films on AlN with Low Thermal Barrier Resistance

“…Once the diamond film is coalesced, the AlN layer should be protected by the diamond layer. Cervenka et al 30 had studied the effect of hydrogen plasma on the nucleation density and surface morphology of diamond grown on single-crystal AlN. Similarly, Pobedinskas et al 31 described a method to enhance the seeding density on AlN.…”

Heteroepitaxial growth of thick 3C‐SiC (110) films by Laser CVD

“…This observation of similar periodic arrays of edge dislocation has been reported in the HRTEM study of other heteroepitaxial structures. 39,40 Therefore, although the large lattice mismatch between 3C-SiC and Si, the epitaxial growth of 3C-SiC (110)/Si (110) have accommodated well by one misfit dislocation in this study. The relaxation of 3C-SiC lattice occurred only in the vicinity of the hetero-interface between 3C-SiC and Si.…”

Conductive Polymers: Opportunities and Challenges in Biomedical Applications

“…This ND seeding step is essential for diamond growth. Due to this reason, the AAO sample was immersed in a colloidal dispersion of ND in water. , ND adhesion to the alumina surface in water improved by the hydrogen termination of the ND surface in a furnace at 800 °C with a H 2 /Ar gas mixture (5% H 2 ). Parts c and d of Figure show SEM images after the CVD growth, which illustrate that the ND seeds homogeneously and covers the entire surface of the anodic alumina.…”