Novel mask-wafer gap measurement scheme with nanometer-level detectivity

Abstract

We describe a means of measuring the gap between mask and substrate in an x-ray lithography system. The method does not require that the gap be scanned. The method encodes the gap in the spatial phase, spatial frequency, and separation of sets of interference fringes. The fringes result from the diffraction from a checkerboard on the mask, with constant period in one direction and varying period in the transverse direction. The separation of fringe sets gives an unambiguous measure of gap when the mask is approaching the substrate, from 400 to 30 μm. At the smaller gaps used for exposure, checkerboards with different chirp periods are utilized to indicate the gap without ambiguity. The phases of the fringes as a function of gap were calibrated with a Fabry-Pérot interferometer. The repeatability of the phases between consecutive scans of gap was found to have a 5 nm standard deviation. This method of measuring gap may prove useful in a variety of applications that require a controlled gap between two plates.

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