High-resolution proximity lithography for nano-optical components

Stuerzebecher, Lorenz; Fuchs, F.; Zeitner, Uwe D.; Tuennermann, Andreas

doi:10.1016/j.mee.2014.10.010

Cited by 24 publications

(15 citation statements)

References 172 publications

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“…The spatial resolution of the printing process in mask-aligner lithography can be improved by introducing a light source with a reduced wavelength. Today's state-ofthe-art ArF excimer lasers at 193 nm are operated at a pulsed regime [1][2][3][4] and are generally complex and expensive. Additionally, they require corrosive and large-volume gas mixtures at high pressures and voltages exceeding 40 kV for high-power operation.…”

Section: Experimental Results Lithographymentioning

confidence: 99%

“…For modern industrial applications in metrology and lithography in the deep-ultraviolet (DUV) spectral region, the pulsed 193 nm excimer laser system is still the state-of-the-art tool [1][2][3][4]. However, these systems have a low wall-plug efficiency and low photon efficiency, cumbersome usability and require an expensive maintenance program.…”

Section: Introductionmentioning

confidence: 99%

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Semiconductor-based narrow-line and high-brilliance 193-nm laser system for industrial applications

Opalevs

Scholz

Stühler

et al. 2018

Solid State Lasers XXVII: Technology and Devices

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We present a novel industrial-grade prototype version of a continuous-wave 193 nm laser system entirely based on solid state pump laser technology. Deep-ultraviolet emission is realized by frequency-quadrupling an amplified diode laser and up to 20 mW of optical power were generated using the nonlinear crystal KBBF. We demonstrate the lifetime of the laser system for different output power levels and environmental conditions. The high stability of our setup was proven in > 500 h measurements on a single spot, a crystal shifter multiplies the lifetime to match industrial requirements. This laser improves the relative intensity noise, brilliance, wall-plug efficiency and maintenance cost significantly. We discuss first lithographic experiments making use of this improvement in photon efficiency.

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Section: Experimental Results Lithographymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Semiconductor-based narrow-line and high-brilliance 193-nm laser system for industrial applications

Opalevs

Scholz

Stühler

et al. 2018

Solid State Lasers XXVII: Technology and Devices

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show abstract

“…While the best resolution is achieved in contact between mask and wafer, in practice proximity lithography with a certain gap g is preferred. In this modus operandi, contamination of the mask is prevented, avoiding abundant mask cleaning that results in an increased yield [1]. The lower bound for the proximity gap depends on the flatness of mask and wafer, as well as on the height of prestructured patterns on the substrate, and typically amounts to about 20 µm.…”

Section: Introductionmentioning

confidence: 99%

“…By locating the resist-coated substrate in one of the Talbot planes, the mask design is replicated [13][14][15], achieving a considerably improved resolution over conventional proximity lithography, as described by Eq. (1). Several developments in the realm of Talbot lithography have been reported, including displacement [16], immersion [17], and gray-scale Talbot lithography [18].…”

Section: Introductionmentioning

confidence: 99%

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Printing sub-micron structures using Talbot mask-aligner lithography with a 193 nm CW laser light source

Vetter¹,

Kirner²,

Opalevs³

et al. 2018

Opt. Express

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A continuous improvement of resolution in mask-aligner lithography is sought after to meet the requirements of an ever decreasing minimum feature size in back-end processes. For periodic structures, utilizing the Talbot effect for lithography has emerged as a viable path. Here, by combining the Talbot effect with a continuous wave laser source emitting at 193 nm, we demonstrate successfully the fabrication of periodic arrays in silicon substrates with sub-micron feature sizes. The excellent coherence and the superior brilliance of this light source, compared to more traditional mercury lamps and excimer lasers as light source, enables the efficient beam shaping and a reduced minimum feature size at a fixed gap of 20 µm. We present a comprehensive study of proximity printing with this system, including simulations and selected experimental results of prints in up to the fourth Talbot plane. This printing technology can be used to manufacture optical metasurfaces, bio-sensor arrays, membranes, or microchannel plates.

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Review of Surface Modification Technologies for Mid‐Infrared Antireflection Microstructures Fabrication

Bushunov

Tarabrin

Lazarev

2021

Laser & Photonics Reviews

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Mid‐infrared materials antireflection is in high demand for high‐powered or ultra‐broadband coherent light sources, where conventional antireflection coatings cannot be reliably applied. This work provides a critical review of the recent advances in microstructure fabrication technology for mid‐infrared antireflection applications. Several techniques are reviewed, including direct imprinting, wet and reactive ion etching using conventional photoresist masking, novel colloid crystal masks, and maskless etching, laser‐induced periodic structure formation, and multiple laser ablation method modifications, including femtosecond laser direct writing, direct laser interference ablation, and single pulse ablation. The advantages and drawbacks of the different approaches are discussed in detail to highlight the most promising techniques for the fabrication of antireflection microstructures capable of achieving 99% transmittance in the 2–16 μm range.

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High-resolution proximity lithography for nano-optical components

Cited by 24 publications

References 172 publications

Semiconductor-based narrow-line and high-brilliance 193-nm laser system for industrial applications

Semiconductor-based narrow-line and high-brilliance 193-nm laser system for industrial applications

Printing sub-micron structures using Talbot mask-aligner lithography with a 193 nm CW laser light source

Review of Surface Modification Technologies for Mid‐Infrared Antireflection Microstructures Fabrication

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