Novel 3.3-kV advanced trench HiGT with low loss and low dv/dt noise

Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user‐friendly) power devices

“…Hence the improvement of the trade-off generally requires complexities from the structural and wafer process points of view [40][41][42][43][44][45][46][47][48]. In the turn-off period, it is also inevitable to face almost same situations in order to obtain waveforms with lower di/dt or less surge voltage [40,44,45,48]. In addition, a rational balance of C gc versus C ge or C ec is an important parameter to achieve soft waveforms without any partial rapid portions or inflection points.…”

“…There is a tight trade‐off relationship between E on and turn‐on d v /d t , which is related to C ge , or between V CEsat and the d v /d t . Hence the improvement of the trade‐off generally requires complexities from the structural and wafer process points of view [40–48]. In the turn‐off period, it is also inevitable to face almost same situations in order to obtain waveforms with lower d i /d t or less surge voltage [40, 44, 45, 48].…”

A New Fin p-Body Insulated Gate Bipolar Transistor With Low Miller Capacitance

“…On the other hand, the floating p-body IGBT can provide relatively lower C GC , but has very poor controllability of turn-on electro-magnetic interference (EMI) noise. IGBT structures with separate floating p-body regions [9] or micro p-body regions [10] were developed to suppress the EMI noise, but at the cost of increased conduction loss or higher C GC . Other IGBT structures such as the carrier stored trench bipolar transistor (CSTBT) [11] and the trench shield planar gate IGBT (TSPG-IGBT) [7] can also offer low C GC .…”

TIGBT with emitter‐embedded gate for low turn‐on loss and low electro‐magnetic interference noise

“…where C GC(OX) is the gate oxide component of C GC and V GE is the gate-to-emitter voltage [1][2][3][4][5][6][7][8]. Clearly, C GC(OX) has the same value in the proposed TIGBT and the conventional one.…”

“…However, too small C GC would cause a high dV/dt noise especially when the free-wheeling diode (FWD) operates at a small current [5]. Suppressing the increase of the potential of the floating P-base region (V Float ) has been proven to be very effective, but some other electrical characteristics, such as the on-state voltage or the breakdown voltage, would be affected [5][6][7][8]. Some efforts have been made to increase the gate-to-emitter capacitance (C GE ) to optimise the ratio of C GC to C GE , but it also increases C GC [9].…”